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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Engineering nanoscale p-n junction via the synergetic dual-doping of p-type boron-doped graphene hybridized with n-type oxygen-doped carbon nitride for enhanced photocatalytic hydrogen evolution
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Engineering nanoscale p-n junction via the synergetic dual-doping of p-type boron-doped graphene hybridized with n-type oxygen-doped carbon nitride for enhanced photocatalytic hydrogen evolution

机译：通过用n型氧掺杂氮化物杂交的P型硼掺杂石墨烯的协同双掺杂来实现纳米级P-N结，以增强光催化氢气进化

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摘要

In this study, an effective 2D-2D heterojunction composite was formulated by hybridizing oxygen doped graphitic carbon nitride (O-gC(3)N(4)) with boron doped reduced graphene oxide (B-rGO) using a combined sonication-assisted electrostatic self-assembly approach. Pristine gC(3)N(4) possesses a negative surface charge, which later transforms into a positive charge upon doping with elemental oxygen. This reversal of surface charge, which occurred on top of doping, established the opportune electrostatic coupling of positively charged O-gC(3)N(4) and negatively charged B-rGO. Moreover, the concerted dual doping of both O-gC(3)N(4) and B-rGO, which exhibited n-type and p-type conductivity, respectively, allowed the construction of a nanoscale p-n heterojunction system at the interface, warranting a more effective and rapid charge separation and in turn bolstering the photocatalytic hydrogen performance. In particular, the optimal loading content of B-rGO was found to be 2 wt% with a corresponding H-2 production rate of 1639 mmol g(-1) after 6 h, which is a remarkable 4-fold photocatalytic improvement as compared to that of O-gC(3)N(4). In brief, this study highlights that the dual doping of both gC(3)N(4) and rGO and their hybridization present a powerful strategy to increase the photoactivity of the composite since doping could remarkably modulate their interaction at the heterointerface.
机译：在该研究中，通过使用组合超声辅助静电静电（B-RGO）将氧掺杂的石墨氮化物（O-GC（3）N（4））杂交氧掺杂的石墨氮化物（O-GC（3）N（4））配制了有效的2D-2D杂官能复合材料自组装方法。原始GC（3）N（4）具有负面表面电荷，后来在用元素氧气掺杂时转化为正电荷。这种表面电荷发生在掺杂顶部的逆转，建立了正电荷的O-GC（3）N（4）和带负电荷的B-RGO的适当静电偶联。此外，o-gc（3）n（4）和b-rgo的齐全双掺杂分别显示出n型和p型导电性，允许在界面处构建纳米级PN异质结系统，保证更有效，快速的电荷分离，又转动膨胀光催化氢气性能。特别地，在6小时后，发现B-RGO的最佳载荷含量为2wt％，相应的H-2产生速率为1639mmol g（-1），这是一个显着的4倍的光催化改善，相比O-GC（3）n（4）的。简而言之，这项研究突出显示GC（3）N（4）和RGO的双重掺杂以及它们的杂交具有强大的策略，以增加复合材料的光度，因为掺杂可以显着地调节其在异偶表面的相互作用。

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    Putri Lutfi Kurnianditia; Ng Boon-Junn; Ong Wee-Jun; Lee Hing Wah; Chang Wei Sea; Chai Siang-Piao;

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    Monash Univ Sch Engn Multidisciplinary Platform Adv Engn Chem Engn Discipline Jalan Lagoon Selatan Bandar Sunway 47500 Selangor Malaysia;

    Monash Univ Sch Engn Multidisciplinary Platform Adv Engn Chem Engn Discipline Jalan Lagoon Selatan Bandar Sunway 47500 Selangor Malaysia;

    ASTAR IMRE Innovis 2 Fusionopolis Way Singapore 138634 Singapore;

    MIMOS Berhad Nanoelect Lab Technol Pk Malaysia Kuala Lumpur 57000 Malaysia;

    Monash Univ Sch Engn Multidisciplinary Platform Adv Engn Mech Engn Discipline Jalan Lagoon Selatan Bandar Sunway 47500 Selangor Malaysia;

    Monash Univ Sch Engn Multidisciplinary Platform Adv Engn Chem Engn Discipline Jalan Lagoon Selatan Bandar Sunway 47500 Selangor Malaysia;

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  • 中图分类 工程材料学;
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