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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Optical properties of (Se80Te20)(100-x)Zn-x (2 <= x <= 6) amorphous thin films
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Optical properties of (Se80Te20)(100-x)Zn-x (2 <= x <= 6) amorphous thin films

机译：（Se80Te20）（100-x）Zn-x（2 <= x <= 6）无定形薄膜的光学性质

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The (Se80Te20)(100-x)Zn-x (2 <= x <= 6) thin film compositions have been prepared by melt quenching technique followed by electron-beam physical vapour deposition. X-ray diffraction pattern and SEM micrographs ascertain the amorphous nature of prepared thin films. The transmission spectra from UV/VIS/NIR double beam spectrophotometer (500 <= lambda (nm) <= 2600) is used for optical characterization of thin films. The absorption coefficient and energetic parameter (A) for various compositions indicate that the absorption mechanism in Se-Te-Zn glassy system occur via allowed indirect transitions. The optical band gap for thin films lies at the edge of near infrared region in A-band (lambda similar to 900 nm).The average heat of atomization has no essential influence on the optical band gap energy values. The refractive index (n) for thin films exhibit normal dispersion in the wavelength range 800 nm <= lambda <= 1100 nm (IR-A), and is nearly constant at longer wavelength lambda >= 1400 nm (IR-B). The dispersion of refractive index below the band gap energy region is studied using the Wemple-DiDomenico (WDD) single oscillator model. It is found that, to a good approximation the single-oscillator energy scales with the optical band gap (E-o approximate to 1.4E(g)(opt)). The deduced value of parameter beta = 0.24 +/- 0.01 corresponds to ionic character of bonds in the Se-Te-Zn system. The dielectric parameters (epsilon', epsilon '',epsilon(infinity), epsilon(L)), optical conductivity (sigma(1), sigma(2)), ratio of carrier concentration to the effective mass (N/m*) have also been deduced for thin films. The calculated values of plasma frequency omega p and N-opt are in good agreement with carrier concentration of semiconductors. The energy loss occurred in the interior of the Se-Te-Zn thin films is found to be due to the interband electronic transitions.
机译：通过熔融淬火技术制备（Se80Te20）（100-x）Zn-X（2 <= X = 6）薄膜组合物，然后通过熔融淬火技术制备，然后是电子束物理气相沉积。 X射线衍射图案和SEM显微照片确定制备薄膜的无定形性质。来自UV / VI / NIR双光束分光光度计（500 <=λ（nm）<= 2600）的透射光谱用于薄膜的光学表征。各种组合物的吸收系数和能量参数（A）表明SE-TE-ZN玻璃系统中的吸收机制通过允许的间接转变发生。用于薄膜的光学带隙位于带带（类似于900nm的Lambda）的近红外区域的边缘。雾化的平均热量对光学带隙能量值没有必要的影响。薄膜的折射率（N）表现出在波长范围内的正常分散体800nm <=λ<= 1100nm（IR-A），并且在较长波长λ> = 1400nm（IR-B）处几乎是恒定的。使用Wemple-Didomenico（WDD）单振荡器模型研究了带隙能量区域以下的折射率下方的分散。发现，对于良好的近似，单振荡器能量缩放与光学带隙（E-O近似为1.4e（g）（选择））。参数β= 0.24 +/- 0.01的推导值对应于SE-TE-Zn系统中的键的离子特性。介电参数（Epsilon'，Epsilon''，Epsilon（Infinity），ε（1）），光导（Sigma（1），Sigma（2）），载流子浓度与有效质量的比率（n / m *）还被推导出薄膜。等离子体频率ωp和n-opt的计算值与半导体的载体浓度很好。发现SE-TE-Zn薄膜内部发生的能量损失是由于间隙电子转换。

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