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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Can the phase-pure BiVO4 (010) epitaxial film be fabricated with a stoichiometric target?
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Can the phase-pure BiVO4 (010) epitaxial film be fabricated with a stoichiometric target?

机译:可以用化学计量靶标制造相纯BIVO4(010)外延膜吗?

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摘要

Bismuth vanadate (BiVO4) is the most promising visible light responsive photocatalytic material that can effectively transform solar energy into chemical fuel. Here, we used a stoichiometric target to systematically investigate the effects of substrate temperature, oxygen partial pressure and deposition time on the growth of monoclinic BiVO4 (010) epitaxial film prepared using pulsed laser deposition. The film was characterized systematically by x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy and UV-visible absorption spectroscopy. The phase-pure epitaxial thin film of BiVO4 could be fabricated at 680 degrees C under the oxygen partial pressure of 43 mTorr after depositing for 1 h. The film contains lot of square and rectangular flaky islands. The optical band gap is 2.55 eV.
机译:钒酸盐铋(Bivo4)是最有前途的可见光响应光催化材料,可有效地将太阳能转化为化学燃料。 这里,我们使用了化学计量的靶标以系统地研究了衬底温度,氧分压和沉积时间对使用脉冲激光沉积制备的单斜晶体BIVO4(010)外延膜的生长的影响。 通过X射线衍射,原子力显微镜,X射线光电子体光谱和UV可见吸收光谱系统系统地表征。 BIVO4的相纯外延薄膜可以在沉积1小时后在43 mTorr的氧分压下在680℃下制造。 这部电影包含大量的方形和矩形片状岛屿。 光带隙是2.55eV。

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