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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Towards smooth (010) beta-Ga(2)O(3)films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio
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Towards smooth (010) beta-Ga(2)O(3)films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio

机译：朝向光滑（010）β-Ga（2）O（3）膜通过等离子体辅助分子束外延进行同型沉淀的薄膜：基板脱皮和金属对氧气通量比的影响

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Smooth interfaces and surfaces are beneficial for most (opto)electronic devices that are based on thin films and their heterostructures. For example, smoother interfaces in (010) beta-Ga2O3/(AlxGa1-x)(2)O(3)heterostructures, whose roughness is ruled by that of the beta-Ga(2)O(3)layer, can enable higher mobility 2-dimensional electron gases by reducing interface roughness scattering. To this end we experimentally prove that a substrate offcut along the [001] direction allows to obtain smooth beta-Ga(2)O(3)layers in (010)-homoepitaxy under metal-rich deposition conditions. Applying In-mediated metal-exchange catalysis (MEXCAT) in molecular beam epitaxy at high substrate temperatures (T-g= 900 degrees C) we compare the morphology of layers grown on (010)-oriented substrates having different unintentional offcuts. The layer roughness is generally ruled by (i) the presence of (110)- and 10
机译：平滑接口和表面对基于薄膜及其异质结构的大多数（光学）电子设备是有益的。例如，在（010）β-Ga 2 O 3 /（AlxGa1-x）（2）O（3）异质结构中的光滑接口，其粗糙度通过β-Ga（2）O（3）层的粗糙度统治，可以更高通过减少界面粗糙度散射来移动2维电子气体。为此，我们通过实验证明沿着[001]方向的衬底脱皮允许在金属富含沉积条件下（010） - 咯萨酸中的光滑β-Ga（2）o（3）层。在高衬底温度（T-G = 900℃）的分子束外延上施加内介质的金属交换催化（MEXCAT），我们比较了在具有不同意外脱乳冲布的（010）的衬底上种植的层的形态。层粗糙度通常由（i）（110） - 和10

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