Atomic layer deposited alpha-Ga2O3 solar-blind photodetectors

Moloney J.; Tesh O.; Singh M.; Roberts J. W.; Jarman J. C.; Lee L. C.; Huq T. N.; Brister J.; Karboyan S.; Kuball M.; Chalker P. R.; Oliver R. A.; Massabuau F. C-P

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Atomic layer deposited alpha-Ga2O3 solar-blind photodetectors

机译：原子层沉积α-GA2O3太阳盲光电探测器

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Low temperature atomic layer deposition was used to deposit alpha-Ga2O3 films, which were subsequently annealed at various temperatures and atmospheres. The alpha-Ga2O3 phase is stable up to 400 degrees C, which is also the temperature that yields the most intense and sharpest reflection by x-ray diffraction. Upon annealing at 450 degrees C and above, the material gradually turns into the more thermodynamically stable epsilon or beta phase. The suitability of the materials for solar-blind photodetector applications has been demonstrated with the best responsivity achieved being 1.2 A W-1 under 240 nm illumination and 10 V bias, for the sample annealed at 400 degrees C in argon. It is worth noting however that the device performance strongly depends on the annealing conditions, with the device annealed in forming gas behaving poorly. Given that the tested devices have similar microstructure, the discrepancies in device performance are attributed to hydrogen impurities.

机译：低温原子层沉积用于沉积α-GA2O3膜，随后在各种温度和大气中退火。 α-Ga2O3相稳定高达400℃，这也是产生X射线衍射最强烈和最锋利的反射的温度。在450摄氏度和上述退火时，该材料逐渐变成更热力稳定的ε或β相。已经证明了太阳盲光度探测器应用的材料的适用性，以在240nm照明和10V偏压下实现的最佳响应度和10V偏差，在氩气中以400℃退火的样品。值得注意的是，设备性能强烈取决于退火条件，该设备在成型气体表现不佳时退火。考虑到测试装置具有类似的微观结构，装置性能的差异归因于氢杂质。

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来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2019年第47期|共7页
作者
Moloney J.; Tesh O.; Singh M.; Roberts J. W.; Jarman J. C.; Lee L. C.; Huq T. N.; Brister J.; Karboyan S.; Kuball M.; Chalker P. R.; Oliver R. A.; Massabuau F. C-P;
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作者单位

Univ Cambridge Dept Mat Sci &

Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

Univ Cambridge Dept Mat Sci &

Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

Univ Bristol Sch Phys HH Wills Phys Lab Tyndall Ave Bristol BS8 1TL Avon England;

Univ Liverpool Sch Engn Brownlow Hill Liverpool L69 3GH Merseyside England;

Univ Cambridge Dept Mat Sci &

Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

Univ Cambridge Dept Mat Sci &

Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

Univ Cambridge Dept Mat Sci &

Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

Univ Cambridge Dept Mat Sci &

Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

Univ Bristol Sch Phys HH Wills Phys Lab Tyndall Ave Bristol BS8 1TL Avon England;

Univ Bristol Sch Phys HH Wills Phys Lab Tyndall Ave Bristol BS8 1TL Avon England;

Univ Liverpool Sch Engn Brownlow Hill Liverpool L69 3GH Merseyside England;

Univ Cambridge Dept Mat Sci &

Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

Univ Cambridge Dept Mat Sci &

Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
gallium oxide; ultraviolet; photodetector; atomic layer deposition; anneal;

机译：氧化镓;紫外线;光电探测器;原子层沉积;退火;

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专利

1. Atomic layer deposited alpha-Ga2O3 solar-blind photodetectors [J] . Moloney J., Tesh O., Singh M., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2019,第47期

机译：原子层沉积α-GA2O3太阳盲光电探测器
2. Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction [J] . Hagyoul Bae, Adam Charnas, Xing Sun, ACS Omega . 2019,第24期

机译：基于原子层沉积Cu2O和纳米膜β-Ga2O3pn氧化物异质结的日盲紫外光电探测器
3. Sub-microsecond response time deep-ultraviolet photodetectors using alpha-Ga2O3 thin films grown via low-temperature atomic layer deposition [J] . Lee Seung Hyun, Lee Kang Min, Kim Young-Bin, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2019,第期

机译：使用低温原子层沉积生长α-GA2O3薄膜的亚微秒响应时间深紫外光探测器
4. Progress in atomic layer deposited α-Ga_2O_3 materials and solar-blind detectors [C] . F.C-P. Massabuau, J.W. Robcrts, D. Nicol, Conference on Oxide-based Materials and Devices . 2021

机译：原子层沉积α-GA_2O_3材料和太阳盲检测器的进展
5. Atomic Layer Deposited Protection Layers for Metal-Insulator-Silicon Water Splitting Cells [D] . Scheuermann, Andrew. 2016

机译：用于金属绝缘体 - 硅水分裂细胞的原子层沉积的保护层
6. Solar-Blind UVPhotodetector Based on Atomic Layer-DepositedCu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction [O] . Hagyoul Bae, Adam Charnas, Xing Sun, 2019

机译：日光紫外线基于原子层沉积的光电探测器Cu 2 O和纳米膜β-Ga2 O 3 pn氧化物异质结
7. Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors [O] . Kumar M., Tekcan B., Okyay A.K. 2014

机译：原子层沉积的基于HfO2的金属绝缘体半导体GaN紫外光电探测器

Atomic layer deposited alpha-Ga2O3 solar-blind photodetectors

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