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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >High-stability reflective bonding pads for GaN-based flip-chip light-emitting diodes packaged by reflow soldering
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High-stability reflective bonding pads for GaN-based flip-chip light-emitting diodes packaged by reflow soldering

机译：用于通过回流焊接的GaN的倒装芯片发光二极管的高稳定性反射粘合焊盘

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摘要

We provide a detailed insight into the effects of metal bonding pads on the performance of GaN-based flip-chip blue light-emitting diodes. The flip-chip blue light-emitting diodes with four kinds of reflective bonding pads were fabricated and compared. During the chip package process by reflow soldering, different bonding pads exhibited distinct voidage and bonding force with the solder layers on Cu-coated AlN ceramic substrates. Compared with other samples in this work, the packaged chips with Ti/Al/Ti/Pt/Au bonding pads showed the lowest voidage of 15.48% and thermal resistance, resulting in the highest bonding shear force and light output power. Meanwhile, the optical power of these samples with Ti/Al/Ti/Pt/Au bonding pads only exhibited a degradation rate of 1.8% after accelerated ageing at 100 degrees C for more than 1000 h. It is concluded that GaN-based flip-chip light-emitting diodes with such Ti/Al/Ti/Pt/Au bonding pads bear good mechanical stability, excellent thermal performance and long-term reliability.
机译：我们详细介绍了金属粘合垫对GaN基倒装芯片蓝发光二极管性能的影响。制造并比较了具有四种反射粘接垫的倒装芯片蓝发光二极管。在芯片封装过程中通过回流焊接期间，不同的粘接焊盘在Cu涂覆的AlN陶瓷基板上具有焊料层的不同的空隙和粘合力。与该工作中的其他样品相比，具有Ti / Al / Ti / Pt / Au键合焊盘的封装芯片显示出15.48％的最低空隙率和热阻，导致粘合剪切力和光输出功率最高。同时，使用Ti / Al / Ti / Pt / Au键合焊盘的这些样品的光功率仅在100℃下加速后的衰老后的降解速率为1.8％，超过1000小时。结论是，GaN基倒装芯片发光二极管具有这种Ti / Al / Ti / Pt / Au键合焊盘的良好机械稳定性，具有优异的热性能和长期可靠性。

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