Superconducting FeSe0.1Te0.9 thin films integrated on Si-based substrates

Huang Jijie; Chen Li; Li Leigang; Qi Zhimin; Sun Xing; Zhang Xinghang; Wang Haiyan

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Superconducting FeSe0.1Te0.9 thin films integrated on Si-based substrates

机译：超导FESE0.1TE0.9集成在基于SI基底的薄膜

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With the goal of integrating superconducting iron chalcogenides with Si-based electronics, superconducting FeSe0.1Te0.9 thin films were directly deposited on Si and SiOx/Si substrates without any buffer layer by a pulsed laser deposition (PLD) method. Microstructural characterization showed excellent film quality with mostly c-axis growth on both types of substrates. Superconducting properties (such as superconducting transition temperature T-c and upper critical field H-c2) were measured to be comparable to that of the films on single crystal oxide substrates. The work demonstrates the feasibility of integrating superconducting iron chalcogenide (FeSe0.1Te0.9) thin films with Si-based microelectronics.

机译：通过将超导铁硫属元素与Si基电子器件集成的目的，超导Fese0.1te0.9薄膜通过脉冲激光沉积（PLD）方法直接沉积在Si和SiOx / Si基板上而没有任何缓冲层。微观结构表征显示出优异的薄膜质量，主要是两种类型的基材上的C轴生长。测量超导性质（例如超导转变温度T-C和上临界场H-C2）以与单晶氧化物基材上的膜的薄膜相当。该工作证明了将超导铁硫属化物（Fese0.1te0.9）薄膜与基于Si基微电子集成的可行性。

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来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2018年第20期|共8页
作者
Huang Jijie; Chen Li; Li Leigang; Qi Zhimin; Sun Xing; Zhang Xinghang; Wang Haiyan;
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作者单位

Purdue Univ Sch Mat Engn W Lafayette IN 47906 USA;

Texas A&

M Univ Dept Mat Sci &

Engn College Stn TX 77843 USA;

Purdue Univ Sch Mat Engn W Lafayette IN 47906 USA;

Purdue Univ Sch Mat Engn W Lafayette IN 47906 USA;

Purdue Univ Sch Mat Engn W Lafayette IN 47906 USA;

Purdue Univ Sch Mat Engn W Lafayette IN 47906 USA;

Purdue Univ Sch Mat Engn W Lafayette IN 47906 USA;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
iron chalcogenide; superconducting thin film; Si-based substrate;

机译：铁硫属化物;超导薄膜;Si基底物;

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1. Superconducting FeSe0.1Te0.9 thin films integrated on Si-based substrates [J] . Huang Jijie, Chen Li, Li Leigang, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2018,第20期

机译：超导FESE0.1TE0.9集成在基于SI基底的薄膜
2. AlN thin films deposited on different Si-based substrates through RF magnetron sputtering [J] . Xiangquan Jiao, Yu Shi, Hui Zhong, Journal of materials science . 2015,第2期

机译：通过射频磁控溅射在不同的硅基衬底上沉积的AlN薄膜
3. Growth of rutile TiO_2 nanorods on anatase TiO_2 thin films on Si-based substrates [J] . Jinsong Wu, Shihhan Lo, Kai Song, Journal of Materials Research . 2011,第13期

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5. Growth, structural, and electrical characterizations of organic thin films on Si-based substrates. [D] . Shi, Jun. 2010

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7. Thin-Film Optical Filters: High Performance, Biocompatible Dielectric Thin-Film Optical Filters Integrated with Flexible Substrates and Microscale Optoelectronic Devices (Advanced Optical Materials 15/2018) [O] . Changbo Liu, Qianyi Zhang, Dan Wang, 2018

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Superconducting FeSe0.1Te0.9 thin films integrated on Si-based substrates

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