Photocurrent enhancement and magnetoresistance in indium phosphide single nanowire by zinc doping

de Oliveira Fernando Maia; Costa Ivani Meneses; Cardozo de Oliveira Edson Rafael; Chiquito Adenilson Jose; Marques Gilmar Eugenio; Teodoro Marcio Daldin

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Photocurrent enhancement and magnetoresistance in indium phosphide single nanowire by zinc doping

机译：锌掺杂磷化铟单纳米线的光电流增强和磁阻

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We report the fabrication of intrinsic and Zn-doped InP single nanowire devices by the vapor-liquid-solid and photolithography techniques. Nanowires with a zincblend structure around 100 nm in radius and length at the micrometer scale were readily observed. Electrical measurements of samples containing single nanowires revealed Ohmic and Schottky behavior for the intrinsic and Zn-doped InP devices respectively. The Zn-doped InP device exhibited a thermal and optical dependence with high photosensitivity, whose main conduction mechanism for temperatures ranging from 160 K to 300 K was verified to be variable range hopping, displaying a hopping distance on the order of 240 nm at a low temperature. Strong temperature-dependent positive magnetoresistance was verified for this device.

机译：我们通过汽液 - 固体和光刻技术报告了内在和Zn掺杂的InP单纳米线装置的制造。容易观察纳米线在半径范围内约为100nm的锌细胞和长度的长度。含有单纳米线的样品的电测量分别显示了本征和Zn掺杂INP器件的欧姆和肖特基行为。 Zn掺杂的InP装置具有高光敏性的热和光学依赖性，其主要传导机构从160 k到300 k的温度验证为可变范围跳跃，跳跃距离为低于240nm的跳跃距离温度。验证了该装置的强温依赖性阳性磁阻。

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来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2018年第25期|共7页
作者
de Oliveira Fernando Maia; Costa Ivani Meneses; Cardozo de Oliveira Edson Rafael; Chiquito Adenilson Jose; Marques Gilmar Eugenio; Teodoro Marcio Daldin;
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作者单位

Fed Univ Sao Carlos UFSCar Phys Dept Semicond Nanostruct Grp CP 676 BR-13565905 Sao Carlos SP Brazil;

Fed Univ Sao Carlos UFSCar Phys Dept Lab Elect Transport Nanostruct NanO LaB CP 676 BR-13565905 Sao Carlos SP Brazil;

Fed Univ Sao Carlos UFSCar Phys Dept Semicond Nanostruct Grp CP 676 BR-13565905 Sao Carlos SP Brazil;

Fed Univ Sao Carlos UFSCar Phys Dept Lab Elect Transport Nanostruct NanO LaB CP 676 BR-13565905 Sao Carlos SP Brazil;

Fed Univ Sao Carlos UFSCar Phys Dept Semicond Nanostruct Grp CP 676 BR-13565905 Sao Carlos SP Brazil;

Fed Univ Sao Carlos UFSCar Phys Dept Semicond Nanostruct Grp CP 676 BR-13565905 Sao Carlos SP Brazil;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
semiconductor; device; nanostructure; nanowire; InP;

机译：半导体;装置;纳米结构;纳米线;INP;

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1. Photocurrent enhancement and magnetoresistance in indium phosphide single nanowire by zinc doping [J] . de Oliveira Fernando Maia, Costa Ivani Meneses, Cardozo de Oliveira Edson Rafael, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2018,第25期

机译：锌掺杂磷化铟单纳米线的光电流增强和磁阻
2. Single-crystal indium phosphide nanowires grown on polycrystalline copper foils with an aluminum-doped zinc oxide template [J] . Zhang Junce, Wei Min, Fryauf David M., Journal of Materials Science . 2015,第14期

机译：在带有铝掺杂氧化锌模板的多晶铜箔上生长的单晶磷化铟纳米线
3. Single step formation of indium and tin doped ZnO nanowires by thermal oxidation of indium-zinc and tin-zinc metal films: Growth and optical properties [J] . Ummar Pasha Shaik, M. Ghanashyam Krishna CERAMICS INTERNATIONAL . 2014,第8aPta2期

机译：通过铟锌和锡锌金属膜的热氧化一步形成铟和锡掺杂的ZnO纳米线：生长和光学性质
4. Enhanced Photocurrent and Photovoltage of Dye-Sensitized Solar Cells with TiO_2 Film Deposited on Indium-Doped Zinc Oxide Substrate [C] . Jong-Gul Doh, Man Gu Kang, Nam Gyu Park, The Meeting of the Electrochemical Society . 2002

机译：用沉积在掺杂铟掺杂氧化锌基底上的TiO_2膜的染料敏化太阳能电池的增强光电流和光电电压
5. Investigation of single indium phosphide nanowires and cadmium sulfide nanosheets by using photocurrent and transport spectroscopy. [D] . Maharjan, Amir M. 2009

机译：使用光电流和传输光谱研究单磷化铟纳米线和硫化镉纳米片。
6. Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate [O] . Kuankuan Lu, Rihui Yao, Wei Xu, 2021

机译：合金电极辅助高性能增强型钕掺杂型氧化铟锌氧化物薄膜晶体管在聚酰亚胺柔性基板上
7. Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms [O] . 2009

机译：磷化铟纳米线的集合：物理特性和功能器件集成在非单晶平台上
8. Electrical Properties of Zinc-and Tellurium-Doped Single-Crystal Gallium Phosphide, [R] . penar,james d. cohen,marvin m. 1971

机译：锌和碲掺杂单晶镓磷化物的电学特性，

Photocurrent enhancement and magnetoresistance in indium phosphide single nanowire by zinc doping

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