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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Group IV semiconductor Ge integration with topological insulator Sb2Te3 for spintronic application
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Group IV semiconductor Ge integration with topological insulator Sb2Te3 for spintronic application

机译：第四组半导体GE集成与拓扑绝缘体SB2TE3用于旋转式应用

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Sb2Te3/Ge heterojunctions were grown on deoxidized GaAs (001) substrates by molecular beam epitaxy to explore a new type of spin torque device. Despite the large lattice mismatch between Ge and Sb2Te3, the films display highly uniform fabrication and good crystallinity, which have been confirmed by structural characterization. The band structures of Sb2Te3/Ge heterojunctions were investigated by x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. Small chemical shift of Sb 3d(5/2) indicates that TI conducting surface is not destroyed, and Ge valence band bending contributes to Fermi level depinning. The band offset of Sb2Te3/Ge heterojunctions is different from common gate dielectric/Ge heterojunctions. The integral quality of the heterostructure reveals the potential of combining topological insulators with semiconductors for the advancement of spintronic devices.
机译：通过分子束外延在脱氧GaAs（001）基板上生长Sb2te3 / Ge异质条件以探索新型的自旋扭矩装置。 尽管Ge和Sb2te 3之间的晶格错配，但薄膜显示出高度均匀的制造和良好的结晶度，并且通过结构表征证实了这一点。 通过X射线照射光谱和紫外光荧光光谱研究了Sb2te3 / Ge异质结的带结构。 Sb 3D的小化学偏移（5/2）表示Ti导电表面未被破坏，GE价带弯曲有助于Fermi水平脱落。 SB2Te3 / Ge异质结的带偏移与公共栅极电介质/ Ge异质结不同。 异质结构的整体质量揭示了与半导体结合拓扑绝缘体以进行旋流器件的推进的潜力。

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