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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Simultaneous determination of defect distributions and energies near InGaN/GaN quantum wells by capacitance-voltage measurement
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Simultaneous determination of defect distributions and energies near InGaN/GaN quantum wells by capacitance-voltage measurement

机译：通过电容 - 电压测量同时测定Ingan / GaN量子阱附近的缺陷分布和能量

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摘要

The distributions, densities and energies of defects near InGaN/GaN quantum wells in blue light-emitting diodes were simultaneously determined by utilizing capacitance-voltage (C-V) measurements. By combining the modulation frequency dependency, temperature dependency and C-V depth profiling with additional laser illumination, the densities and the locations of the defective layers could be determined. The relative defect densities of the devices were directly compared by monitoring the magnitude of the frequency dependence. This frequency dependency varies distinctly as the sample temperature changes. The activation energies of defects are then determined by analyzing the frequency dependency of C-V with temperature. We found that three different defects states were formed in a low-temperature-grown un-doped GaN (LT-GaN) layer inserted under the active layer. The activation energies of those defects were determined to be 3.96, 12.1 and 45.9 meV. The formation of additional defects states in the active layers induced by the insertion of LT-GaN layer was also observed.
机译：通过利用电容 - 电压（C-V）测量，同时确定蓝色发光二极管中的Ingan / GaN量子阱附近的缺陷的分布，密度和能量。通过组合调制频率依赖性，温度依赖性和C-V深度分布，具有额外的激光照明，可以确定缺陷层的密度和位置。通过监测频率依赖的幅度，直接比较器件的相对缺陷密度。随着样本温度的变化，这种频率依赖性明显变化。然后通过分析C-V与温度的频率依赖性来确定缺陷的激活能量。我们发现在有源层下面的低温生长的未掺杂GaN（LT-GaN）层中形成三种不同的缺陷状态。这些缺陷的激活能量被确定为3.96,12.1和45.9 mev。还观察到通过插入LT-GaN层引起的有源层中形成附加缺陷状态。

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