Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template

Lin Yunhao; Yang Meijuan; Wang Wenliang; Lin Zhiting; Li Guoqiang

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Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template

机译：Si（111）基底上的质量增强GaN外延薄膜在三维GaN模板上沉积SIN

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High-quality crack-free GaN epitaxial films were successfully grown on Si(111) substrates using metal-organic chemical vapor deposition by in situ depositing SiN on a 3-dimensional (3D) GaN template. The GaN epitaxial films with 0-600 s 3D GaN templates were grown. It was found that the crystalline quality of GaN epitaxial films could be optimized and the cracks could be suppressed within the window of the growth time of the 3D GaN template between 0 to 600 s. For the sample with 180 s 3D GaN template, X-ray rocking curve measurements revealed the minimum full-width at half-maximum values of 348 and 406 arcsec for GaN(0002) and GaN(10-12), respectively, indicating the best crystalline quality among all the samples. Furthermore, scanning electron microscopy and in situ reflectance curves suggested that the 3D GaN template growth time changed the size and density of the GaN islands on the 3D GaN template surface, thus affecting the subsequent coalescence process of GaN islands after SiN deposition, and consequently resulted in variation in the crystalline quality and the stress of GaN epitaxial films. This work broadens the approach to achieve high-quality crack-free GaN epitaxial films on Si substrates for applications in GaN-based devices.

机译：在三维（3D）GaN模板上，使用金属 - 有机化学气相沉积在Si（111）底板上成功生长了高质量的无裂缝GaN外延薄膜。 GaN外延薄膜具有0-600秒的3D GaN模板。发现可以优化GaN外延膜的晶体质量，并且可以在3D GaN模板的生长时间的窗口内抑制裂缝在0到600秒的窗口内。对于具有180秒3D GaN模板的样本，X射线摇摆曲线测量显示为GaN（0002）和GaN（10-12）的半最大值为348和406 Arcsec的最小全宽度，表示最佳所有样品中的结晶品质。此外，扫描电子显微镜和原位反射曲线表明，3D GaN模板生长时间改变了3D GaN模板表面上的甘岛的尺寸和密度，从而影响了甘岛后甘岛的随后的聚结过程，因此导致了在晶体质量和GaN外延膜的应力的变化中。这项工作拓宽了在GaN的设备中实现了Si基板上的高质量裂缝GaN外延薄膜的方法。

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来源
《RSC Advances》 |2016年第88期|共7页
作者
Lin Yunhao; Yang Meijuan; Wang Wenliang; Lin Zhiting; Li Guoqiang;
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South China Univ Technol State Key Lab Luminescent Mat &

Devices Wushan Rd Guangzhou 510640 Guangdong Peoples R China;

South China Univ Technol State Key Lab Luminescent Mat &

Devices Wushan Rd Guangzhou 510640 Guangdong Peoples R China;

South China Univ Technol State Key Lab Luminescent Mat &

Devices Wushan Rd Guangzhou 510640 Guangdong Peoples R China;

South China Univ Technol State Key Lab Luminescent Mat &

Devices Wushan Rd Guangzhou 510640 Guangdong Peoples R China;

South China Univ Technol State Key Lab Luminescent Mat &

Devices Wushan Rd Guangzhou 510640 Guangdong Peoples R China;

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正文语种 eng
中图分类化学;
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1. Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template [J] . Lin Yunhao, Yang Meijuan, Wang Wenliang, RSC Advances . 2016,第88期

机译：Si（111）基底上的质量增强GaN外延薄膜在三维GaN模板上沉积SIN
2. Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD [J] . Wang Haiyan, Li Zhiting, Wang Wenliang, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2017,第期

机译：通过PLD和MOCVD的组合方法在Si衬底上产生的GaN外延膜的生长机制
3. Integration of epitaxial Pb(Zr0.52Ti0.48)O-3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers [J] . Elibol K., Nguyen M. D., Hueting R. J. E., Thin Solid Films . 2015,第SEPa30PTaA期

机译：使用金红石型TiO2缓冲层在GaN / AlGaN / GaN / Si（111）衬底上集成外延Pb（Zr0.52Ti0.48）O-3薄膜
4. GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor [C] . M. Hao, H. Ishikawa, B. Zhang, International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：在蓝宝石衬底上生长的GaN薄膜和GaN的发光二极管，具有原位金属有机气相外延反应器的高密度纳米陨石液
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC [O] . Andreea Bianca Serban, Vladimir Lucian Ene, Doru Dinescu, 2021

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7. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates [O] . Robert F. Davis, T Gehrke, K.J. Linthicum, 2001

机译：6H-SiC（0001）和Si（111）衬底上GaN和Algan合金薄膜的pendeo-Xizaial生长和表征。
8. Three-Dimensional Microstructural Characterization of GaN Nonplanar Substrate Laterally Epitaxially Overgrown by Metalorganic Chemical Vapor Deposition [R] . Zhou, W. , Ren, D. , Dapkus, P. D. 2005

机译：金属有机化学气相沉积法横向外延生长的GaN非平面衬底的三维微观结构表征

Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template

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