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Vapour phase nucleation of ZnO nanowires on GaN: growth habit, interface study and optical properties

机译:ZnO纳米线对GaN的气相成核:生长习性,界面研究和光学性质

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摘要

In the current work aligned ZnO nanowires were grown on p-GaN thin films for optoelectronic applications, using a vapour phase technique in a tubular furnace. To investigate the growth of ZnO nanowires at the interface with GaN, the heterojunction were characterized by scanning electron microscopy and X-ray photoelectron spectroscopy. Experimental evidence indicates that the Au catalyst remains at the interface between ZnO and GaN, and that interdiffusion of GaN into ZnO occurs. Concerning the ZnO growth, it starts with Vapour Liquid Solid (VLS) growth from Au catalyzer nanoparticles, then lateral growth takes place making nanowalls. After this initial stage, the nanowires both continue growth by VLS and start growing via a Vapour-Solid (VS) mechanism from the nanowalls. To investigate the potential of the heterostructure of ZnO nanowires on GaN as a light emitting diode, the device was also analysed by current-voltage characterization, photoluminescence and electroluminescence spectroscopy.
机译:在当前的工作中,在管状炉中使用气相技术在P-GaN薄膜上生长在P-GaN薄膜上,以在管状炉中使用气相技术。为了研究ZnO纳米线在与GaN界面处的生长,通过扫描电子显微镜和X射线光电子谱表征异质结。实验证据表明,Au催化剂仍然处于ZnO和GaN之间的界面处,并且发生了GaN进入ZnO的界面。关于ZnO生长,它从Au催化剂纳米颗粒的蒸汽液体固体(VLS)生长开始,然后进行横向生长进行纳米瓦尔。在该初始阶段之后,纳米线均通过VLS继续生长,并从纳米瓦尔通过蒸汽固体(VS)机构开始生长。为了探讨ZnO纳米线在GaN上作为发光二极管的潜能性的电位,通过电流 - 电压表征,光致发光和电致发光光谱分析该装置。

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  • 来源
    《RSC Advances》 |2016年第18期|共7页
  • 作者单位

    CNR INO Sensor Lab Via Branze 45 I-25133 Brescia Italy;

    CNR INO Sensor Lab Via Branze 45 I-25133 Brescia Italy;

    CNR INO Sensor Lab Via Branze 45 I-25133 Brescia Italy;

    CNR INO Sensor Lab Via Branze 45 I-25133 Brescia Italy;

    CNR ISMN POB 10 I-00015 Rome Monterotondo St Italy;

    CNR ISMN POB 10 I-00015 Rome Monterotondo St Italy;

    CNR INO Sensor Lab Via Branze 45 I-25133 Brescia Italy;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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