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Electrophoretic deposited oxide thin films as charge transporting interlayers for solution-processed optoelectronic devices: the case of ZnO nanocrystals

机译:电泳沉积氧化物薄膜作为溶液加工光电器件的电荷输送层间:ZnO纳米晶体的情况

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摘要

A promising fabrication method of electron transporting interlayers for solution-processed optoelectronic devices by electrophoretic deposition (EPD) of colloidal zinc oxide (ZnO) nanocrystals was demonstrated. A low voltage of 3-5 V and a short deposition time of 40 s at room temperature were found to be sufficient to generate dense and uniform ZnO thin films. The EPD ZnO nanocrystal films were applied as ETLs for inverted organic solar cell and polymer light emitting diodes (PLEDs). By optimizing the EPD processing of ZnO nanocrystal electron transporting layers (ETLs), inverted organic solar cells based on [3,4-b]-thiophene/benzodithiophene (PTB7): [6-6]-phenyl-C71-butyric acid methyl ester (PC71BM) and poly(3-hexylthiophene) (P3HT): [6-6]-phenyl-C-61-butyric acid methyl ester (PC61BM) with an average PCE of 8.4% and 4.0% were fabricated. In combination with the PLEDs and flexible devices results, we conclude that the EPD processed ZnOnanocrystal thin films can serve as high quality ETLs for solution-processed optoelectronic devices.
机译:证实了通过电泳沉积(EPD)胶体锌(ZnO)纳米晶体的溶液加工光电器件电子传输夹层的有希望的制造方法。发现低电压为3-5V和室温下40秒的短沉积时间足以产生致密且均匀的ZnO薄膜。 EPD ZnO纳米晶体薄膜作为倒的有机太阳能电池和聚合物发光二极管(PLEDS)施加为ETL。通过优化ZnO纳米晶体传输层(EtL)的环保加工,基于[3,4-B] - 该苯酚/苯二苯甲烷(PTB7)的倒置有机太阳能电池:[6-6] - 苯基-C71-丁二酸甲酯(PC71BM)和聚(3-己基噻吩)(P3HT):[6-6] - 苯基-C-61-丁酸甲酯(PC61BM),平均pCE为8.4%和4.0%。结合PLEDS和柔性器件结果,我们得出结论,EPD加工ZnonanoCrystal薄膜可以用作溶液加工光电器件的高质量ETL。

著录项

  • 来源
    《RSC Advances》 |2015年第11期|共7页
  • 作者单位

    Zhejiang Univ Cyrus Tang Ctr Sensor Mat &

    Applicat Ctr Chem High Performance &

    Novel Mat Dept Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Cyrus Tang Ctr Sensor Mat &

    Applicat Ctr Chem High Performance &

    Novel Mat Dept Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Cyrus Tang Ctr Sensor Mat &

    Applicat Ctr Chem High Performance &

    Novel Mat Dept Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat Devices Suzhou 215123 Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat Devices Suzhou 215123 Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat Devices Suzhou 215123 Peoples R China;

    Zhejiang Univ Cyrus Tang Ctr Sensor Mat &

    Applicat Ctr Chem High Performance &

    Novel Mat Dept Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Cyrus Tang Ctr Sensor Mat &

    Applicat Ctr Chem High Performance &

    Novel Mat Dept Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Linkoping Univ IFM SE-58183 Linkoping Sweden;

    Linkoping Univ IFM SE-58183 Linkoping Sweden;

    Linkoping Univ IFM SE-58183 Linkoping Sweden;

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  • 正文语种 eng
  • 中图分类 化学;
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