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首页> 外文期刊>RSC Advances >Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering
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Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

机译：基于摄影光谱基于AR气体聚束离子束溅射探测有机半导体/电极界面在有机半导体/电极界面的能量水平控制效应持续性

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摘要

Oxygen (O-2) plasma treatment is one of the most widely applied methods for modifying the electrode work function. However, owing to the instability of O-2-plasma treatment effects under air-exposed conditions, it is necessary to confirm whether the O-2-plasma treatment effects can be continuously maintained at organic semiconductor/electrode interfaces in realistic devices. In the present study, the electronic structures of organic semiconductor/O-2-plasma treated electrode interfaces were characterized by using in situ deposition and ultraviolet photoemission spectroscopy analysis. The structures of the corresponding samples were re-analyzed after a 1-week-long exposure to air to confirm the energy-level changes. To achieve this, we inceptively designed the studies of the energy level alignments of air-exposed samples based on the photoemission spectroscopy combined with Ar gas cluster ion beam sputtering process. The results of our studies clearly confirm the consistency of O-2-plasma treatment effects at organic semiconductor/electrode interfaces. In addition, we confirmed the preservation of controlled energy-level structures at C-60/Au interfaces by examining the relative rates of electron transfer at the C-60/Au interfaces, obtained from photoluminescence (PL) measurements.
机译：氧气（O-2）等离子体处理是改变电极功函数的最广泛应用的方法之一。然而，由于在空气暴露条件下O-2等离子体处理效果的不稳定性，必须确认O-2等离子体处理效果是否可以在现实装置中的有机半导体/电极接口中连续地保持。在本研究中，通过使用原位沉积和紫外线光谱光谱分析来表征有机半导体/ O-2等离子体处理电极界面的电子结构。在曝光1周暴露于空气后重新分析相应样品的结构，以确认能量水平变化。为了实现这一点，我们毫读基于与AR气体聚类离子束溅射工艺结合的光曝光光谱来设计对空气暴露样品的能量水平对准的研究。我们的研究结果清楚地证明了O-2 - 等离子体处理效应在有机半导体/电极界面的一致性。此外，我们通过检查从光致发光（PL）测量获得的C-60 / AU界面处的电子传递的相对速率确认在C-60 / AU界面处保存受控能量水平结构。

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  • 来源
    《RSC Advances》 |2015年第95期|共9页
  • 作者

    Yun Dong-Jin; Shin Taeho; Park SungJun; Shin Youngsik; Kyung YongKoo; Chung JaeGwan; Kim Yongsu;

  • 作者单位

    Samsung Adv Inst Technol Analyt Sci Lab Samsung Adv Inst Technol Gyeonggi Do 443803 South Korea;

    Samsung Adv Inst Technol Analyt Sci Lab Samsung Adv Inst Technol Gyeonggi Do 443803 South Korea;

    Samsung Adv Inst Technol Analyt Sci Lab Samsung Adv Inst Technol Gyeonggi Do 443803 South Korea;

    Samsung Adv Inst Technol Analyt Sci Lab Samsung Adv Inst Technol Gyeonggi Do 443803 South Korea;

    Samsung Adv Inst Technol Analyt Sci Lab Samsung Adv Inst Technol Gyeonggi Do 443803 South Korea;

    Samsung Adv Inst Technol Analyt Sci Lab Samsung Adv Inst Technol Gyeonggi Do 443803 South Korea;

    Samsung Adv Inst Technol Analyt Sci Lab Samsung Adv Inst Technol Gyeonggi Do 443803 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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