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Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

机译：溶胶稳定剂对溶液加工ZnO薄膜结构和电子性能的影响

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摘要

ZnO is an increasingly important wide bandgap semiconductor for optoelectronic applications. Solution processing provides a facile and inexpensive method to form ZnO thin films with high throughput. The sol stabilizer used in the solution processing of ZnO functions variously as a sol homogenizer, chelating agent, wettability improver and capping agent. In spite of its obvious importance in influencing ZnO film properties, a restricted set of short chain alkaline sol stabilizers have been used in prior reports. We examined the effect of six different sol stabilizers, including acidic and longer chain species, along with a recipe without any stabilizer, on the grain size, crystallographic texture, and resistivity of solution processed ZnO films on thermal oxide-coated silicon substrates, and found large variations in the structural and electrical properties as a consequence of the choice of sol stabilizer. We found that ZnO films formed using oleic acid as the sol stabilizer possessed a strong (002) preferred orientation with a Lotgering factor as high as 0.86. The key insight we obtained is that the sol stabilizer strongly influences the film surface area and activation energy barrier for inter-grain transport. We comprehensively studied the steady state and transient behavior of ZnO films deposited using different stabilizers and compared their lifetime and mobility-lifetime products. When exposed to illumination, the conductivity of the deposited films increased by several orders of magnitude. This is attributed to the trapping of the nonequilibrium holes by the surface adsorbed oxide species, which produces equivalent number of excess electrons in the conduction band. Impedance spectroscopy and C-V measurements were performed to calculate the doping of the ZnO thin films. ZnO thin film transistors were also fabricated and the effects of the sol stabilizer on the different parameters of the TFT like mobility and threshold voltage were investigated.
机译：ZnO是用于光电应用的越来越重要的宽带隙半导体。解决方案加工提供了一种具有高吞吐量的ZnO薄膜的容易和廉价的方法。用于ZnO溶液处理的溶胶稳定剂各种溶液作为溶胶均化器，螯合剂，润湿性改进剂和封盖剂。尽管在影响ZnO膜性质方面具有明显的重要性，但在先前的报告中使用了一套受限制的短链碱性溶解器。我们检查了六种不同的溶胶稳定剂，包括酸性和较长链物种的效果，以及没有任何稳定剂的食谱，在晶粒尺寸，晶体纹理和溶液的溶液涂覆的硅基衬底上加工ZnO膜的电阻率，发现由于溶胶稳定剂的选择，结构和电性能的大变化。我们发现使用油酸形成的ZnO膜作为溶胶稳定剂具有强度（002）优选的取向，升高因子高达0.86。我们获得的关键洞察力是，溶胶稳定器强烈影响薄膜表面区域和谷物间运输的激活能量屏障。我们综合地研究了使用不同稳定剂沉积的ZnO膜的稳态和瞬态行为，并比较了它们的寿命和移动寿命产品。当暴露于照明时，沉积膜的导电性增加了几个数量级。这归因于通过表面吸附的氧化物物种捕获非QuiLibium孔，其在导通带中产生等效数量的过量电子。进行阻抗光谱和C-V测量以计算ZnO薄膜的掺杂。还制造了ZnO薄膜晶体管，并研究了溶胶稳定剂对迁移率和阈值电压等TFT的不同参数的影响。

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  • 来源
    《RSC Advances》 |2015年第106期|共12页
  • 作者

    Adl Ahmad Hossein; Kar Piyush; Farsinezhad Samira; Sharma Himani; Shankar Karthik;

  • 作者单位

    Univ Alberta Dept Elect &

    Comp Engn Edmonton AB T6G 2V4 Canada;

    Univ Alberta Dept Elect &

    Comp Engn Edmonton AB T6G 2V4 Canada;

    Univ Alberta Dept Elect &

    Comp Engn Edmonton AB T6G 2V4 Canada;

    Univ Alberta Dept Elect &

    Comp Engn Edmonton AB T6G 2V4 Canada;

    Univ Alberta Dept Elect &

    Comp Engn Edmonton AB T6G 2V4 Canada;

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  • 正文语种 eng
  • 中图分类 化学;
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