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Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells

机译:GA掺杂和中空结构对SnO2光电染料染料敏化太阳能电池的带结构和光伏性能的影响

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摘要

The photon-to-electricity conversion properties of the prepared photoanode based on SnO2 nanocrystals, which are assembled as the rough hollow microspheres (RHMs), are improved by aliovalent Ga~(3+) doping. The conduction band (CB) of the doped SnO2 shifts negatively with increasing the Ga content from 1 to 5 mol% gradually. Moreover, the prepared Ga-doped SnO2 photoanode shows an advantage in repressing the charge recombination. As a result, both the negative shift of the CB and repressed charge recombination enhance the open-circuit photovoltage (V_(oc)) and the short-circuit photocurrent (J_(sc))of the DSSCs, and the power conversion efficiency (h) is increased by 80% at 3 mol% Ga-doping SnO2 to compare with the undoped SnO2 for DSSCs (AM 1.5, 100 mW cm~(-2) ). After treating the samples with TiCl4, an overall photoconversion efficiency (approximately 7.11%) for SnO2 based DSSCs is achieved.
机译:基于SnO2纳米晶体的制备的光电的光子 - 电转换性能作为粗糙的中空微球(RHMS),通过Alioportent Ga〜(3+)掺杂改善。 掺杂的SnO2的导通带(Cb)对逐渐增加1至5mol%的Ga含量增加。 此外,制备的GA掺杂的SnO2光电仪在压制电荷重组方面显示出优点。 结果,Cb和抑制电荷重组的负偏移都增强了DSSCS的开路光伏(V_(OC))和短路光电流(J_(SC))和电力转换效率(H. )在3mol%Ga-掺杂SnO 2中增加了80%,以与DSSC的未掺杂的SnO2相比(1.5,100mM〜(-2))。 在用TiCl4处理样品之后,实现了基于SnO2的DSSC的总光电解效率(约7.11%)。

著录项

  • 来源
    《RSC Advances》 |2015年第114期|共8页
  • 作者单位

    School of Advanced Materials Peking University Shenzhen Graduate School Shenzhen 518055 China.;

    School of Advanced Materials Peking University Shenzhen Graduate School Shenzhen 518055 China.;

    Beijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China.;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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