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首页> 外文期刊>RSC Advances >A facile and low cost strategy to synthesize Cd1-xZnxSe thin films for photoelectrochemical performance: effect of zinc content
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A facile and low cost strategy to synthesize Cd1-xZnxSe thin films for photoelectrochemical performance: effect of zinc content

机译：用于合成光电化学性能的CD1-XZNXSE薄膜的容易和低成本的策略：锌含量的影响

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摘要

In the present work, we report a facile chemical route for the deposition of Cd1-xZnxSe thin films using a simple, self-organized arrested precipitation technique (APT). The effect of Zn content on optical, structural, morphological, compositional and photoelectrochemical properties in Cd1-xZnxSe thin films was investigated. The optical properties and band gap profile of Cd1-xZnxSe thin films were varied with respect to Zn content. The estimated direct optical band gap was found to be in the range of 1.77 to 1.98 eV. X-ray diffraction (XRD) studies revealed that the films were nanocrystalline in nature with a pure cubic crystal structure and the calculated crystallite size lies in the range 36.5 to 66.3 nm. Scanning electron microscopy (SEM) demonstrates that the surface morphology can be improved with incorporation of Zn into the CdSe lattice. Compositional analysis of all samples was carried out using energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS), which confirms the stoichiometric deposition of Cd1-xZnxSe thin films. J-V characteristics of all samples were studied in sulphide/polysulphide redox electrolyte. A high efficiency of 0.68% was observed due to lower crystallite size and higher surface area. These results show that by varying Zn content in Cd1-xZnxSe thin films, the photoelectrochemical performance can be enhanced.
机译：在本作工作中，我们通过简单的自组织被捕的降水技术（APT）报告了一种沉积CD1-XZNXSE薄膜的容易化学途径。研究了Zn含量对CD1-XZNXSE薄膜中光学，结构，形态，组成和光电化学性质的影响。 CD1-XZNXSE薄膜的光学性质和带隙轮廓相对于Zn含量变化。发现估计的直接光带间隙在1.77至1.98eV的范围内。 X射线衍射（XRD）研究表明，薄膜与纯度立方晶体结构的纳米晶体是纳米晶体，并且计算的结晶尺寸位于36.5至66.3nm的范围内。扫描电子显微镜（SEM）表明，通过将Zn掺入CDSE格子中可以改善表面形态。使用能量分散X射线光谱（EDS）和X射线光电子能谱（XPS）进行所有样品的组成分析，其证实了CD1-XZNXSE薄膜的化学计量沉积。在硫化物/聚硫化物氧化还原电解质中研究了所有样品的J-V特征。由于较低的微晶尺寸和更高的表面积，观察到高效率为0.68％。这些结果表明，通过在CD1-XZNXSE薄膜中改变Zn含量，可以提高光电化学性能。

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  • 来源
    《RSC Advances》 |2015年第69期|共11页
  • 作者

    Bagade Chaitali S.; Mali Sawanta S.; Ghanwat Vishvanath B.; Khot Kishorkumar V.; Patil Pallavi B.; Kharade Suvarta D.; Mane Rahul M.; Desai Neha D.; Hong Chang K.; Patil Pramod S.; Bhosale Popatrao N.;

  • 作者单位

    Shivaji Univ Dept Chem Mat Res Lab Kolhapur 416004 Maharashtra India;

    Chonnam Natl Univ Adv Chem Engn Dept Polymer Energy Mat Lab Gwangju South Korea;

    Shivaji Univ Dept Chem Mat Res Lab Kolhapur 416004 Maharashtra India;

    Shivaji Univ Dept Chem Mat Res Lab Kolhapur 416004 Maharashtra India;

    Shivaji Univ Dept Chem Mat Res Lab Kolhapur 416004 Maharashtra India;

    Shivaji Univ Dept Chem Mat Res Lab Kolhapur 416004 Maharashtra India;

    Shivaji Univ Dept Chem Mat Res Lab Kolhapur 416004 Maharashtra India;

    Shivaji Univ Dept Chem Mat Res Lab Kolhapur 416004 Maharashtra India;

    Chonnam Natl Univ Adv Chem Engn Dept Polymer Energy Mat Lab Gwangju South Korea;

    Shivaji Univ Dept Phys Thin Film Mat Lab Kolhapur 416004 Maharashtra India;

    Shivaji Univ Dept Chem Mat Res Lab Kolhapur 416004 Maharashtra India;

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