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Thiol treatment to enhance photoluminescence and electroluminescence of CdSe/CdS core-shell quantum dots prepared by thermal cycling of single source precursors

机译:硫醇处理以增强CDSE / CDS核心 - 壳量子点的光致发光和电致发光,通过热循环单源前体制备

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摘要

Stable and high photoluminescence quantum-yield CdSe/CdS core-shell quantum dots (QDs) with a zinc blende (ZB) structure in both the core and the shell are prepared by over-coating CdSe core nanocrystals with a controlled number of CdS monolayers (MLs). The epitaxial growth reaction is induced via the temperature cycling of a single-source precursor, namely cadmium diethyldithiocarbamate (Cd(DEDTC)(2)), in oleylamine (OLA) and 1-octadecene (ODE) at temperatures between 140 and 200 degrees C. The quantum yield of the resulting core-shell quantum dots is then enhanced by means of a ligand exchange process with alkanethiol. The ligand-protected CdSe/CdS core-shell QDs are spin coated on an indium tin oxide (ITO)-glass substrate to form a type-I QD light-emitting device (QD-LED). It is shown that the QD-LED has a current efficiency of 0.22 cd A(-1). Notably, the current efficiency is 4.5 times higher than that of a QD-LED incorporating non-thiol-protected QDs, and is comparable to the best reported performance for type-I QD-LED devices in the literature.
机译:核心和壳体中的锌混合物(Zb)结构的稳定和高光致发光量子 - 产量Cdse / Cds核 - 壳量子点(QDS)通过用受控数量的Cds单层涂覆Cdse核心纳米晶体( MLS)。通过单源前体的温度循环诱导外延生长反应,即在140至200摄氏度的温度下在oleylamine(OLA)和1-十八烯(SOE)中的镉二乙基硫代氨基甲酸酯(CD(DEDTC)(2))诱导。然后通过用链烷醇的配体交换方法增强所得核 - 壳量子点的量子产率。保护配体保护的CDSE / CDS核壳QD型在氧化铟锡(ITO)玻璃基板上旋涂,以形成I型QD发光器件(QD-LED)。结果表明,QD-LED的电流效率为0.22cd a(-1)。值得注意的是,电流效率高于包含非硫醇保护QD的QD-LED的效率高4.5倍,并且与文献中的I型QD-LED器件的最佳报告性能相当。

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  • 来源
    《RSC Advances》 |2015年第13期|共9页
  • 作者单位

    Far East Univ Nanomat Lab Tainan 74448 Taiwan;

    Far East Univ Nanomat Lab Tainan 74448 Taiwan;

    Natl Taitung Univ Dept Appl Sci Taitung 950 Taiwan;

    Natl Cheng Kung Univ Dept Phys Tainan 70101 Taiwan;

    Natl Tsing Hua Univ Dept Chem Hsinchu 30013 Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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