Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

Sharma Pankaj; Singh Rohit; Awasthi Vishnu; Pandey Sushil K.; Garg Vivek; Mukherjee Shaibal

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Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

机译：从高导电ZnO：GA基于UV光电探测器的零偏压处检测高光响应

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Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W-1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of similar to 22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements.

机译：通过使用金属半导体 - 金属结构的双离子束溅射制造基于Ga掺杂的ZnO（GZO）的紫外光探测器（PDS）。室温可操作的PD在零偏压下响应58mA W-1的响应度，比不同物理气相沉积工艺产生的类似材料的15倍，内部和外部量子效率值类似于22.5％和37.4％。由于两个金属半导体触点处的不同屏障，所以非偏见的光电检测归因于由于GZO的重掺杂和内置电场的隧道。通过依赖于温度相关的电流测量来研究电极中的不对称性。

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来源
《RSC Advances》 |2015年第104期|共7页
作者
Sharma Pankaj; Singh Rohit; Awasthi Vishnu; Pandey Sushil K.; Garg Vivek; Mukherjee Shaibal;
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Indian Inst Technol Hybrid Nanodevice Res Grp HNRG Indore 453446 Madhya Pradesh India;

Indian Inst Technol Hybrid Nanodevice Res Grp HNRG Indore 453446 Madhya Pradesh India;

Indian Inst Technol Hybrid Nanodevice Res Grp HNRG Indore 453446 Madhya Pradesh India;

Indian Inst Technol Dept Elect Engn Bombay 400076 Maharashtra India;

Indian Inst Technol Hybrid Nanodevice Res Grp HNRG Indore 453446 Madhya Pradesh India;

Indian Inst Technol Hybrid Nanodevice Res Grp HNRG Indore 453446 Madhya Pradesh India;

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正文语种 eng
中图分类化学;
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1. Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector [J] . Sharma Pankaj, Singh Rohit, Awasthi Vishnu, RSC Advances . 2015,第104期

机译：从高导电ZnO：GA基于UV光电探测器的零偏压处检测高光响应
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Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

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