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Friction mechanism of zinc oxide films prepared by atomic layer deposition

机译：原子层沉积制备的氧化锌膜的摩擦机制

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摘要

Friction and wear can make the normal operation of zinc oxide (ZnO) films in many devices impracticable. In this paper, the friction mechanism of ZnO films was studied. The ZnO films were prepared by atomic layer deposition (ALD) on a Si (111) substrate, and the crystal structure of the films was controlled by adjusting the substrate temperature. The surface morphology, microstructure and composition of the ZnO films were studied by scanning probe microscopy (SPM), transmission electron microscopy (TEM) and Auger electron microscopy (AES), respectively. The friction coefficient of the ZnO films was measured by a ball-on-disk tester. The results show that the ZnO film deposited at 300 degrees C has a larger crystal size than that deposited at 150 degrees C. In addition, the 300 degrees C deposited ZnO film consists of mainly (002)-textured nanocrystal, while the 150 degrees C deposited ZnO film consists of other orientations of nanocrystal, such as (100) and (101)-textured nanocrystals. The friction coefficient of the ZnO films is similar to 0.1, much smaller than 0.6 of the Si (111) substrate. Low friction coefficient is attributed to plastic deformation induced nanocrystal structure to amorphous structure transformation. The 150 degrees C deposited ZnO film has smaller crystal size than the 300 degrees C deposited ZnO film, and thus it deforms more easily and the friction coefficient is smaller.
机译：摩擦和磨损可以使氧化锌（ZnO）薄膜在许多装置中的正常运行不切实际。本文研究了ZnO薄膜的摩擦机制。通过在Si（111）衬底上通过原子层沉积（ALD）制备ZnO膜，通过调节衬底温度来控制膜的晶体结构。通过扫描探针显微镜（SPM），透射电子显微镜（TEM）和螺旋钻电子显微镜（AES）研究了ZnO膜的表面形态，微观结构和组成。 ZnO膜的摩擦系数通过滚珠盘式测试仪测量。结果表明，在300摄氏度下沉积的ZnO膜具有比在150℃下沉积的晶体尺寸的较大晶体尺寸。此外，300摄氏度沉积的ZnO膜主要由（002） - 伸展纳米晶体，而150℃沉积的ZnO膜由纳米晶体的其他取向组成，例如（100）和（101） - 裂纹纳米晶体。 ZnO膜的摩擦系数类似于0.1，远小于Si（111）衬底的0.6。低摩擦系数归因于塑性变形诱导的纳米晶体结构与非晶结构转化。 150摄氏度的沉积ZnO膜具有比300摄氏沉积的ZnO膜更小的晶体尺寸，因此更容易变形并且摩擦系数较小。

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  • 来源
    《RSC Advances》 |2015年第68期|共8页
  • 作者

    Chai Zhimin; Lu Xinchun; He Dannong;

  • 作者单位

    Tsinghua Univ State Key Lab Tribol Beijing 100084 Peoples R China;

    Tsinghua Univ State Key Lab Tribol Beijing 100084 Peoples R China;

    Natl Engn Res Ctr Nanotechnol Shanghai 200241 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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