• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Quality-enhanced AlN epitaxial films grown on Al substrates by two-step growth
【24h】

Quality-enhanced AlN epitaxial films grown on Al substrates by two-step growth

机译：通过两步生长在Al基材上生长的质量增强AlN外延薄膜

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Quality-enhanced AlN epitaxial films have been grown on Al substrates by pulsed laser deposition with two-step growth by the combination of low-temperature (LT) and high-temperature (HT) growth. The effect of the HT growth temperature on the interfacial property, surface morphology and crystalline quality of the as-grown AlN epitaxial films is studied in detail. It is found that as the HT growth temperature increases from 450 to 650 degrees C, the AlN/Al heterointerfaces of similar to 300 nm thick AlN epitaxial films remain sharp and clear, and the surface morphology and crystalline quality of similar to 300 nm thick AlN epitaxial films are improved gradually. Especially, the similar to 300 nm thick AlN epitaxial films grown at a HT growth temperature of 650 degrees C show sharp and abrupt AlN/Al hetero-interfaces, very smooth surfaces with a root-mean-square surface roughness of 1.1 nm, and high crystalline quality with full-widths at half-maximum for AlN(0002) and AlN(10 (1) over bar2) X-ray rocking curves of 0.45 degrees and 0.72 degrees, respectively. The quality-enhanced AlN epitaxial films on Al substrates are of paramount importance for the fabrication of highly-efficient AlN-based devices.
机译：通过使用低温（LT）和高温（HT）生长的两步生长，通过脉冲激光沉积在Al基材上生长了质量增强的AlN外延薄膜。详细研究了HT生长温度对生长AlN外延膜的界面性质，表面形态和晶体质量的影响。结果发现，随着HT生长温度从450升至650℃，类似于300nm厚的AlN外延膜的Aln / Al异料蔗种保持锋利明显，并且表面形态和结晶质量类似于300nm厚的Aln外延薄膜逐渐提高。特别地，与300nm厚的AlN外延膜一起生长在650℃的HT生长温度下显示锋利且突然的Aln / Al杂界，非常光滑的表面，具有1.1nm的根平均表面粗糙度，高晶体质量为ALN（0002）和ALN（10（1）上的ALN（10（1））X射线摇摆曲线分别为0.45度和0.72度的全宽。 Al基材上的质量增强的ALN外延薄膜对于制造高效的基于ALN的装置至关重要。

著录项

  • 来源
    《RSC Advances》 |2015年第118期|共6页
  • 作者

    Wang Wenliang; Yang Weijia; Wang Haiyan; Zhu Yunnong; Li Guoqiang;

  • 作者单位

    S China Univ Technol State Key Lab Luminescent Mat &

    Devices Guangzhou 510640 Peoples R China;

    S China Univ Technol State Key Lab Luminescent Mat &

    Devices Guangzhou 510640 Peoples R China;

    S China Univ Technol State Key Lab Luminescent Mat &

    Devices Guangzhou 510640 Peoples R China;

    S China Univ Technol State Key Lab Luminescent Mat &

    Devices Guangzhou 510640 Peoples R China;

    S China Univ Technol State Key Lab Luminescent Mat &

    Devices Guangzhou 510640 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号