机译:基于优先取向填料,Bi2S3 /聚(偏二氟乙烯)复合材料具有高介电常数和不寻常的低介电损失
Beihang Univ Sch Mat Sci &
Engn Beijing Key Lab Adv Funct Mat &
Thin Film Technol Beijing 100191 Peoples R China;
Beihang Univ Sch Mat Sci &
Engn Beijing Key Lab Adv Funct Mat &
Thin Film Technol Beijing 100191 Peoples R China;
Beihang Univ Sch Mat Sci &
Engn Beijing Key Lab Adv Funct Mat &
Thin Film Technol Beijing 100191 Peoples R China;
Beihang Univ Sch Mat Sci &
Engn Beijing Key Lab Adv Funct Mat &
Thin Film Technol Beijing 100191 Peoples R China;
Beihang Univ Sch Mat Sci &
Engn Beijing Key Lab Adv Funct Mat &
Thin Film Technol Beijing 100191 Peoples R China;
机译:基于优先取向填料,Bi2S3 /聚(偏二氟乙烯)复合材料具有高介电常数和不寻常的低介电损失
机译:高介电常数和低介电损耗聚(偏二氟乙烯)纳米复合材料通过小载荷的二维Bi2Te3 //2O3六边形纳米载体
机译:聚偏氟乙烯-三氟乙烯-氯氟乙烯纳米复合材料的核-壳结构超支化芳族聚酰胺/ BaTiO3杂化填料,其介电常数与渗透复合材料的介电常数相当
机译:高介电常数和低介电损耗的聚偏二氟乙烯纳米复合材料
机译:聚偏二氟乙烯基电活性聚合物的光学和介电应用。
机译:聚乙烯吡咯烷酮填料对聚偏氟乙烯复合材料进行表面改性的Ba(Zr0.3Ti0.7)O3纳米纤维具有增强的介电常数和储能密度
机译:由聚乙烯吡咯烷酮填料的表面改性的BA(Zr0.3Ti0.7)O3纳米纤维用于聚(偏二氟乙烯)复合材料,具有增强的介电常数和能量存储密度