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Bi2S3/poly(vinylidene fluoride) composite with high dielectric constant and unusual low dielectric loss based on preferentially oriented fillers

机译:基于优先取向填料,Bi2S3 /聚(偏二氟乙烯)复合材料具有高介电常数和不寻常的低介电损失

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摘要

The main challenge in the field of capacitors is how to reconcile the contradiction of lowering the dielectric loss while maintaining a high dielectric constant of polymer based composites. In this work, a novel two-phase ferroelectric polymer composite, consisting of semiconducting bismuth sulfide (Bi2S3) nanorods and a poly(vinylidene fluoride) (PVDF) matrix, was fabricated by a sequence of casting, hot-stretching and hot-pressing techniques. Orderly polymer composites based on PVDF assembled with parallel aligned Bi2S3 nanorods were realized in the composites after a hot-stretching-pressing process. It's interesting to note that those orderly polymer composites exhibit excellent dielectric properties. Results show that the composites with oriented structure have high dielectric constant and unusual low dielectric loss. The parallel aligned Bi2S3 nanorods along the tensile-strain direction could be responsible for the improvement of dielectric properties of the composites. This study also provides an extremely useful method to reduce the dielectric loss of similar kinds of composites.
机译:电容器领域的主要挑战是如何调和降低介电损耗的矛盾,同时保持基于聚合物基复合材料的高介电常数。在这项工作中,通过铸造,热拉伸和热压技术序列制造了由半导体铋硫化物(Bi 2 S 3)纳米棒和聚(偏二氟乙烯)(PVDF)基质(PVDF)基质组成的新型二相铁电聚合物复合材料。在热拉伸压制过程之后,在复合材料中实现了基于与平行排列的Bi2S3纳米棒组装的PVDF的有序聚合物复合材料。值得注意的是,那些有序的聚合物复合材料表现出优异的介电性能。结果表明,具有取向结构的复合材料具有高介电常数和不寻常的低介电损耗。沿拉伸应变方向的平行对准的BI2S3纳米棒可以负责改善复合材料的电介质性质。本研究还提供了一种极其有用的方法,以减少类似种类的复合材料的介电损耗。

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  • 来源
    《RSC Advances》 |2015年第117期|共7页
  • 作者单位

    Beihang Univ Sch Mat Sci &

    Engn Beijing Key Lab Adv Funct Mat &

    Thin Film Technol Beijing 100191 Peoples R China;

    Beihang Univ Sch Mat Sci &

    Engn Beijing Key Lab Adv Funct Mat &

    Thin Film Technol Beijing 100191 Peoples R China;

    Beihang Univ Sch Mat Sci &

    Engn Beijing Key Lab Adv Funct Mat &

    Thin Film Technol Beijing 100191 Peoples R China;

    Beihang Univ Sch Mat Sci &

    Engn Beijing Key Lab Adv Funct Mat &

    Thin Film Technol Beijing 100191 Peoples R China;

    Beihang Univ Sch Mat Sci &

    Engn Beijing Key Lab Adv Funct Mat &

    Thin Film Technol Beijing 100191 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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