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Introducing nanoscaled surface morphology and percolation barrier network into mesoporous silica coatings

机译:将纳米级表面形态和渗透阻挡网络引入中孔硅胶涂层中

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摘要

Mesoporous silica thin films were patterned at the sub-micron scale utilizing the ion hammering effect in order to combine the advantages of mesoporous character and surface morphology, while preserving the interconnected pore system or creating laterally separated porous volumes surrounded by nonpermeable compact zones. Porous silica coatings were prepared by a sol-gel method with an ordered and disordered pore system using micellar templates. A hexagonally ordered Langmuir-Blodgett type monolayer of silica spheres was applied as a mask against Xe+ ion irradiation. The ion energy was chosen according to Monte-Carlo simulations to achieve structures with high lateral contrast between irradiated and unirradiated, i.e., masked areas. The disordered pore system proved to be more resistant against ion bombardment. Although the created surface morphologies were similar, the main character of the pore system could be tailored to be interconnected or separated by controlling the ion fluence. Confocal fluorescence images and ellipsometric porosimetry measurements confirmed that the contribution of transition zone between the intact masked and damaged regions to the porosity is negligible. Furthermore, the majority of the porous volume can be preserved as an interconnected pore system by the application of low ion fluence. By increasing the fluence value, however, separated porous volumes can be created at the expense of the total pore volume.
机译:利用离子锤击效果在亚微米级上图案化了介孔二氧化硅薄膜,以结合中孔特征和表面形态的优点,同时保留互连的孔系统或产生由不可逼近的紧凑区包围的横向分离的多孔体积。通过使用胶束模板的溶胶 - 凝胶法制备多孔二氧化硅涂层,用有序和无序的孔系统制备。将六角有序的Langmuir-Blodgett型单层施加二氧化硅球作为掩模施加XE +离子照射。根据Monte-Carlo模拟选择离子能量,以在辐照和未照射之间的横向对比度之间实现具有高横向对比的结构,即掩蔽区域。无序的孔隙系统被证明更耐受离子轰击。虽然所产生的表面形态相似,但是通过控制离子注量,可以定制孔系统的主结构以互连或分离。共聚焦荧光图像和椭圆仪孔隙测量测量结果证实,过渡区在完整的遮蔽和受损区域之间的过渡区的贡献可以忽略不计。此外,通过施加低离子注量,可以将大多数多孔体积作为相互连接的孔系统保存。然而,通过增加流量的值,可以以总孔体积牺牲牺牲分离的多孔体积。

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  • 来源
    《RSC Advances》 |2015年第74期|共13页
  • 作者单位

    Budapest Univ Technol &

    Econ Dept Phys Chem &

    Mat Sci H-1521 Budapest Hungary;

    Semilab Semicond Phys Lab Co Ltd H-1117 Budapest Hungary;

    Hungarian Acad Sci Energy Res Ctr Inst Tech Phys &

    Mat Sci H-1525 Budapest Hungary;

    Hungarian Acad Sci Wigner Res Ctr Phys Inst Particle &

    Nucl Phys H-1525 Budapest Hungary;

    Hungarian Acad Sci Energy Res Ctr Inst Tech Phys &

    Mat Sci H-1525 Budapest Hungary;

    Hungarian Acad Sci Energy Res Ctr Inst Tech Phys &

    Mat Sci H-1525 Budapest Hungary;

    Hungarian Acad Sci Energy Res Ctr Inst Tech Phys &

    Mat Sci H-1525 Budapest Hungary;

    Budapest Univ Technol &

    Econ Dept Phys Chem &

    Mat Sci H-1521 Budapest Hungary;

    Hungarian Acad Sci Energy Res Ctr Inst Tech Phys &

    Mat Sci H-1525 Budapest Hungary;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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