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首页> 外文期刊>Cryogenics >Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures
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Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures

机译：分析在低温下使用渐变沟道SOI nMOSFET实现的源极跟随器缓冲器

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摘要

This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SOI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of buffers implemented with GC and standard SOI nMOS transistors considering devices with the same mask channel length and same effective channel length. It is shown that the use of GC devices allows for achieving improved gain in all inversion levels in a wide range of temperatures. In addition, this improvement increases as temperature is reduced. It is shown that GC transistors can provide virtually constant gain, while for standard devices, the gain departs from the maximum value depending on the temperature and inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to study the reasons for the enhanced gain of GC MOSFETs at low temperatures.
机译：这项工作研究了在低温下使用标准通道和渐变通道（GC）全耗尽（FD）SOI nMOSFET实现的源极跟随器缓冲器的操作。通过比较考虑到具有相同掩模沟道长度和相同有效沟道长度的器件的GC和标准SOI nMOS晶体管实现的缓冲器的电压增益来执行分析。结果表明，使用气相色谱仪可以在较宽的温度范围内提高所有反演水平的增益。另外，随着温度降低，这种改进增加。结果表明，GC晶体管可提供几乎恒定的增益，而对于标准器件，增益会偏离最大值，具体取决于温度和由偏置电流和输入电压施加的反转电平。为了研究低温下GC MOSFET增益增加的原因，进行了二维数值模拟。

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