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首页> 外文期刊>Cryogenics >Evaluation of biasing and protection circuitry components for cryogenic MMIC low-noise amplifiers
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Evaluation of biasing and protection circuitry components for cryogenic MMIC low-noise amplifiers

机译：评估低温MMIC低噪声放大器的偏置和保护电路组件

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摘要

Millimeter-wave integrated circuits with gate lengths as short as 35 nm are demonstrating extremely low-noise performance, especially when cooled to cryogenic temperatures. These operate at low voltages and are susceptible to damage from electrostatic discharge and improper biasing, as well as being sensitive to low-level interference. Designing a protection circuit for low voltages and temperatures is challenging because there is very little data available on components that may be suitable. Extensive testing at low temperatures yielded a set of components and a circuit topology that demonstrates the required level of protection for critical MMICs and similar devices. We present a circuit that provides robust protection for low voltage devices from room temperature down to 4 K.
机译：栅极长度短至35 nm的毫米波集成电路表现出极低的噪声性能，尤其是在冷却至低温时。它们在低电压下工作，容易受到静电放电和不当偏压的损害，并对低电平干扰敏感。为低压和高温设计保护电路具有挑战性，因为在适用的组件上只有很少的数据可用。在低温下进行的广泛测试产生了一组组件和电路拓扑，证明了关键MMIC和类似设备所需的保护水平。我们提供了一种电路，可为从室温到4 K的低压设备提供强大的保护。

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