Comparative study of the microstructure of Bi _2Se _3 thin films grown on Si(111) and InP(111) substrates

Tarakina N.V.; Schreyeck S.; Borzenko T.; Schumacher C.; Karczewski G.; Brunner K.; Gould C.; Buhmann H.; Molenkamp L.W.

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Comparative study of the microstructure of Bi _2Se _3 thin films grown on Si(111) and InP(111) substrates

机译：Si（111）和InP（111）衬底上生长的Bi _2Se _3薄膜的微观结构比较研究

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Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been carried out to clarify the microstructure of Bi _2Se _3 thin films grown by molecular beam epitaxy (MBE) on Si(111) and InP(111) substrates. The film grown on InP displays much better overall quality at the microstructural level than does the film grown on the Si substrate. A layer of poor crystalline quality at the interface followed by well-crystallized Bi _2Se _3 has been observed for both substrates. The thickness of this interface layer is not uniform; it varies across the sample from zero, showing a sharp interface between the substrate and Bi _2Se _3, up to ～1 nm and ～1.8 nm for Bi _2Se _3/InP and Bi _2Se _3/Si, respectively. Formation of rotation twin domains and lamellar twins has been observed and is described in detail for both substrates.

机译：已经进行了透射电子显微镜（TEM）和扫描电子显微镜（SEM）来阐明通过分子束外延（MBE）在Si（111）和InP（111）衬底上生长的Bi _2Se _3薄膜的微观结构。在InP上生长的膜在微观结构水平上显示出比在Si衬底上生长的膜更好的整体质量。对于两种衬底，都观察到界面处结晶质量差的层，随后是结晶良好的Bi _2Se _3。该界面层的厚度不均匀。它在整个样品中从零开始变化，显示了衬底与Bi _2Se _3之间的锐利界面，分别对于Bi _2Se _3 / InP和Bi _2Se _3 / Si分别达到〜1 nm和〜1.8 nm。已经观察到旋转孪晶畴和层状孪晶的形成，并且对两种基材都进行了详细描述。

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《Crystal growth & design》 |2012年第4期|共6页
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Tarakina N.V.; Schreyeck S.; Borzenko T.; Schumacher C.; Karczewski G.; Brunner K.; Gould C.; Buhmann H.; Molenkamp L.W.;
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Comparative study of the microstructure of Bi _2Se _3 thin films grown on Si(111) and InP(111) substrates

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