Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates

Burrows C.W.; Dobbie A.; Myronov M.; Hase T.P.A.; Wilkins S.B.; Walker M.; Mudd J.J.; Maskery I.; Lees M.R.; McConville C.F.; Leadley D.R.; Bell G.R.

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Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates

机译：Ge / Si（111）虚拟衬底上铁磁MnSb（0001）薄膜的异质外延生长

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Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.

机译：铁磁性MnSb（0001）的分子束外延生长已在通过减压化学气相沉积法生长的高质量，完全松弛的Ge（111）/ Si（111）虚拟衬底上实现。使用反射高能电子衍射，同步加速器硬X射线衍射，X射线光发射光谱和磁力测定法对外延层进行表征。 MnSb膜的表面重建，磁性，晶体质量和应变松弛行为与在GaAs（111）上生长的MnSb相似。与GaAs衬底相反，衬底原子不会通过MnSb膜偏析，并且不存在MnSb的其他多晶型物。

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《Crystal growth & design》 |2013年第11期|共7页
作者
Burrows C.W.; Dobbie A.; Myronov M.; Hase T.P.A.; Wilkins S.B.; Walker M.; Mudd J.J.; Maskery I.; Lees M.R.; McConville C.F.; Leadley D.R.; Bell G.R.;
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正文语种 eng
中图分类晶体学;
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Heteroepitaxial; ferromagnetic; Ge/Si(111);

机译：hetero epitaxial;ferromagnetic;GE/SI(111);

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1. Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates [J] . Burrows C.W., Dobbie A., Myronov M., Crystal growth & design . 2013,第11期

机译：Ge / Si（111）虚拟衬底上铁磁MnSb（0001）薄膜的异质外延生长
2. Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition [J] . Chunli Liu, S. H. Chang, T. W. Noh, Physica status solidi, B. Basic research . 2007,第5期

机译：生长温度和氧气压力对蓝宝石（0001）衬底上脉冲激光沉积异质外延ZnO薄膜性能的影响
3. Optimized Growth of Heteroepitaxial (111) NiFe_3O_4 Thin Films on (0001) Sapphire with Two In-Plane Variants via Chemical Solution Deposition [J] . Safoura Seifikar, Bridget Calandro, Goran Rasic, Journal of the American Ceramic Society . 2013,第10期

机译：通过化学溶液沉积在具有两个平面内变体的（0001）蓝宝石上优化生长异质外延（111）NiFe_3O_4薄膜
4. Effect of growth condition of buffer layer for heteroepitaxial InSb films grown on Ge(111) substrate [C] . Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：Ge（111）衬底上异质外延InSb薄膜缓冲层生长条件的影响
5. Growth of gallium nitride and aluminum gallium nitride thin films using conventional and pendeo-expitaxial growth processes on hydrogen(6)-silicon carbide(0001) and silicon(111) substrates. [D] . Gehrke, Thomas. 2000

机译：使用常规和五极外延生长工艺在氢（6）-碳化硅（0001）和硅（111）衬底上生长氮化镓和氮化铝镓薄膜。
6. Heteroepitaxial Growth of Ferromagnetic MnSb(0001)Films on Ge/Si(111) VirtualSubstrates [O] . ChristopherW. Burrows, Andrew Dobbie, Maksym Myronov, -1

机译：铁磁MnSb（0001）的异质外延生长Ge / Si（111）虚拟电影基材
7. Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates [O] . Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, 2013

机译：Ge / Si（111）虚拟衬底上铁磁MnSb（0001）薄膜的异质外延生长

Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates

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