Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition

Chunli Liu; S. H. Chang; T. W. Noh; J.-H. Song; J. Xie

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Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition

机译：生长温度和氧气压力对蓝宝石（0001）衬底上脉冲激光沉积异质外延ZnO薄膜性能的影响

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We report a systematic study on the effect of growth temperature and O2 pressure on the structural, optical, and electrical properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. The combination of high growth temperature and low O2 pressure was found to improve the crystalline quality of initial heteroepitaxial ZnO films, which can be attributed to the enhanced surface migration of adatoms and thermal energy. The low-temperature photoluminescence spectra from ZnO films were dominated by donor-bound exciton emission with very weak deep level emission. The temperature dependent Hall measurement showed that the films are highly degenerated, mainly due to the high defect density near the interface region.

机译：我们报告了生长温度和氧气压力对通过在蓝宝石（0001）衬底上脉冲激光沉积制备的异质外延ZnO薄膜的结构，光学和电学性质的影响的系统研究。发现高生长温度和低O2压力的组合可改善初始异质外延ZnO薄膜的晶体质量，这可归因于吸附原子的表面迁移和热能增强。 ZnO薄膜的低温光致发光光谱以供体结合的激子发射为主，深能级发射非常弱。随温度变化的霍尔测量结果表明，薄膜高度退化，主要是由于界面区域附近的缺陷密度高。

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《Physica status solidi, B. Basic research》 |2007年第5期|共5页
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Chunli Liu; S. H. Chang; T. W. Noh; J.-H. Song; J. Xie;
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1. Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition [J] . Chunli Liu, S. H. Chang, T. W. Noh, Physica status solidi, B. Basic research . 2007,第5期

机译：生长温度和氧气压力对蓝宝石（0001）衬底上脉冲激光沉积异质外延ZnO薄膜性能的影响
2. Synchrotron X-ray Diffraction Study of Single-Phase β-AlN Thin Films Heteroepitaxially Grown on Sapphire (0001) Substrates by Pulsed Laser Deposition [J] . Kazushi Sumitani, Ryota Ohtani, Tomohiro Yoshida, Japanese journal of applied physics . 2010,第2issue1期

机译：脉冲激光沉积在蓝宝石（0001）衬底上异质外延生长的单相β-AlN薄膜的同步X射线衍射研究
3. Comparative study of ZnO thin film and nanopillar growth on YSZ(111) and sapphire (0001) substrates by pulsed laser deposition [J] . Himanshu Verma, Devajyoti Mukherjee, Sarath Witanachchi, Journal of Crystal Growth . 2010,第12a13期

机译：脉冲激光沉积在YSZ（111）和蓝宝石（0001）衬底上ZnO薄膜和纳米柱生长的比较研究
4. Substrate effects on the heteroepitaxial growth of ZnO thin films by pulsed laser deposition [C] . Sang Sub Kim, Jung Ho Je, Jin Hyeok Kim International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：脉冲激光沉积对ZnO薄膜杂膜生长的底物效应
5. Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn, Mg)O by pulsed laser deposition. [D] . Li, Yuanjie. 2006

机译：通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和（Zn，Mg）O。
6. The effect of substrate temperature and oxygen partial pressure on the properties of nanocrystalline copper oxide thin films grown by pulsed laser deposition [O] . Syed Farid Uddin Farhad 2021

机译：衬底温度和氧分压对脉冲激光沉积生长纳米晶铜氧化物薄膜性能的影响
7. Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates [O] . Liu, C., Chang, S. H., Noh, T. W., 2006

机译：初始生长行为及其微观结构特征蓝宝石（0001）衬底上的异质外延ZnO薄膜

Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition

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