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首页> 外文期刊>Cryogenics >Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs
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Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs

机译：常关的低温特性AlGaN / Gan-On-Si门嵌入式MOSH

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摘要

We investigated the low-temperature operation of normally-off AlGaN/GaN heterostructure field-effect-transistors (HFETs) with gate-recessed metal-oxidesemiconductor (MOS) structure and normally-on Schottky-gate high-electron-mobility-transistors (HEMTs). Device characteristics measured from 100 to 300 K exhibited the distinct temperature-dependence between two types of devices. While the increase of on-current was observed from normally-on AlGaN/GaN Schottky-gate HEMTs due to the enhanced mobility in the two-dimensional electron gas (2-DEG) channel, normally-off AlGaN/GaN gate-recessed MOSHFETs demonstrated distinctive characteristics at 100 K including the decrease of on-current and the positive shift of threshold voltage (V-th). The temperature-dependence observed in gate-recessed MOSHFETs is attributed to the different characteristics of the recessed channel from the 2-DEG channel, in which the sheet carrier density (n(sh)) and mobility (mu) were reduced as the temperature approaches the cryogenic regime.
机译：我们调查了常压AlGaN / GaN异质结构场效应晶体管（HFET）的低温操作，具有栅极凹陷的金属 - 氧化型（MOS）结构和常上肖特基栅极高电子移动晶体管（HEMTS ）。从100到300 k测量的器件特性表现出两种类型的装置之间的不同温度依赖性。虽然由于二维电子气体（2°）通道（2-DEG）通道中的增强型移动性，常压AlGaN / GaN门嵌入式MOSHECT，但虽然从普通的AlGaN / GaN Schottky栅极垫片中观察到导通电流的增加。在100 k时的独特特征，包括降低电流和阈值电压（V-Th）的正偏移。在栅极凹陷的MOSHFET中观察到的温度依赖性归因于来自2°通道的凹槽通道的不同特性，其中纸张载体密度（N（SH））和移动性（MU）随温度方法而减少低温制度。

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