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首页> 外文期刊>Advanced Powder Technology: The internation Journal of the Society of Powder Technology, Japan >Time-dependent evolution pathway of CIGSe nanocrystals by low-temperature process
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Time-dependent evolution pathway of CIGSe nanocrystals by low-temperature process

机译：低温工艺释放释放纳米晶体的时间依赖性进化途径

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摘要

We report a systematic time-dependent investigation of Cu(In-0.7, Ga-0.3)Se-2 nanocrystals (CIGSe NCs) by the hot-injection process at low reaction temperature. The reaction time was varied from 0 min to 16 h, to study the reaction mechanism and growth process of CIGSe NCs. Structural analysis showed the formation of beta-CuSe phase at 0 min and mixed phase of beta-CuSe and CIGSe, when the reaction time was between 5 min and 4 h. The size of NCs was increased from 3 to 38 nm as the reaction time increases. The composition of Cu/(In + Ga) was decreased while Ga/(In + Ga) increased as a function of reaction time. Based on the results, the possible formation mechanism of CIGSe NCs was proposed. The sequence of CIGSe formation is initiated from binary beta-CuSe and then the mixture of beta-CuSe and CIGSe, which subsequently transferred to single phase CIGSe by gradual incorporation of In3+ and Ga3+ ions into the beta-CuSe crystal lattice. Formation of single phase CIGSe with the optimum bandgap of 1.24 eV and targeted composition was obtained at 8 h. Additionally, thin films were prepared by drop casting of NCs ink. Single phase CIGSe NCs films showed significant improvement in the morphological, electrical and optoelectronic properties than other films, indicating their potential applicability in low-cost thin film solar cells. (C) 2019 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
机译：我们通过在低反应温度下通过热注射过程报告了对Cu（0.7，Ga-0.3）Se-2纳米晶（CIGSE NCS）的系统时间依赖性研究。反应时间从0分钟变化至16小时，以研究CIGSE NCS的反应机制和生长过程。结构分析显示，当反应时间在5分钟至4小时之间时，在0 min和β-cigse的混合相位下形成β-cuSe相的形成。随着反应时间的增加，NCs的尺寸从3到38nm增加。 Cu /（In + Ga）的组合物在随着反应时间的函数的函数增加时降低。基于结果，提出了CIGSE NCS的可能形成机制。通过二元β-丝，然后通过β-cues和egse的混合物引发释放序列，然后通过将In3 +和Ga 3 +离子逐渐掺入β-夹壳晶格中转移到单相释放物中。在8小时内获得具有1.24eV和靶向组合物的最佳带隙的单相缩减的单相缩减。另外，通过NCS油墨的铸造制备薄膜。单相CIGSE NCS薄膜显示出的形态学，电气和光电性质的显着改善，而不是其他薄膜，表明它们在低成本薄膜太阳能电池中的潜在适用性。 （c）2019年日本粉末技术学会。由elsevier b.v发表。和日本粉末科技会。版权所有。

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