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首页> 外文期刊>Crystal growth & design >Crystal Shape Engineering of Topological Crystalline Insulator SnTe Microcrystals and Nanowires with Huge Thermal Activation Energy Gap
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Crystal Shape Engineering of Topological Crystalline Insulator SnTe Microcrystals and Nanowires with Huge Thermal Activation Energy Gap

机译：具有巨大热活化能隙的拓扑晶体绝缘子SnTe微晶和纳米线的晶体形状工程

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Since different high-symmetrical crystal planes of topological crystalline insulator possess their own topological electronic structure, manipulating crystal shapes with distinct facets of SnTe nanostructures is crucial for the realization of desired topological surface properties. Here, we developed crystal shapes engineering for the controllable synthesis of SnTe microcrystals and nanowires with specific exposed surfaces by optimizing experimental parameters in the chemical vapor deposition process. Crystal shapes of SnTe microcrystals are tailored from {100} surface-covered cubes, {100} and {111} surface-coated truncated octahedron, to a {111} surface-terminated octahedron. Significantly, with gold nanoparticles as the catalyst, two novel SnTe nanowires, octahedron-attached SnTe nanowires, and truncated octahedron-assisted SnTe nanowires, are achieved. The requirement of minimizing the overall surface energy drives the formation of various crystal shapes of SnTe microcrystals and nanowires. In addition, SnTe nanowires possess a huge thermal activation energy gap (350 ± 17 meV), 14 times larger than the energy scale of room temperature. This huge thermal activation energy gap can protect topological surface states of SnTe nanowires against the disturbance of thermal excitation. Our work provides the building block for the realization of unique topological surface effects on specific facets and novel spintronic devices.
机译：由于拓扑晶体绝缘体的不同高对称晶体平面具有其自身的拓扑电子结构，因此要控制具有所需Sn表面纳米结构的不同晶面的晶体形状对于实现所需的拓扑表面特性至关重要。在这里，我们通过优化化学气相沉积工艺中的实验参数，开发了晶体形状工程技术，用于可控合成SnTe微晶和具有特定暴露表面的纳米线。 SnTe微晶的晶体形状从{100}表面覆盖的立方体，{100}和{111}表面涂覆的截短八面体改制成{111}表面端接的八面体。重要的是，以金纳米颗粒为催化剂，获得了两条新颖的SnTe纳米线，八面体连接的SnTe纳米线和截短的八面体辅助的SnTe纳米线。最小化总表面能的要求驱动了SnTe微晶和纳米线的各种晶体形状的形成。此外，SnTe纳米线具有巨大的热活化能隙（350±17 meV），比室温的能量规模大14倍。这种巨大的热活化能隙可以保护SnTe纳米线的拓扑表面状态免受热激发的干扰。我们的工作为在特定刻面和新型自旋电子器件上实现独特的拓扑表面效果提供了基础。

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