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METHOD OF INCREASING ENERGY BAND GAP OF CRYSTALLINE ALUMINUM OXIDE LAYER AND METHOD OF MANUFACTURING CHARGE TRAP MEMORY DEVICE COMPRISING CRYSTALLINE ALUMINUM OXIDE LAYER HAVING HIGH ENERGY BAND GAP
METHOD OF INCREASING ENERGY BAND GAP OF CRYSTALLINE ALUMINUM OXIDE LAYER AND METHOD OF MANUFACTURING CHARGE TRAP MEMORY DEVICE COMPRISING CRYSTALLINE ALUMINUM OXIDE LAYER HAVING HIGH ENERGY BAND GAP
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机译：增加晶体氧化铝层的能带隙的方法和制造具有高能带隙的晶体氧化铝层的电荷陷阱存储装置的方法
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摘要
A method of increasing energy band gap of a crystalline aluminum oxide layer and a method of manufacturing a charge trap memory device comprising a crystalline aluminum oxide layer having high energy band gap are provided to increase an energy band gap of a crystalline aluminum oxide layer by forming a crystalline aluminum oxide layer with a wet oxidation process and a thermal process. An amorphous aluminum oxide layer(20b) is formed on an underlayer(18) in order to enhance energy band gap of an aluminum oxide layer. Hydrogen(H) or hydroxyl radical(OH) is introduced within the amorphous aluminum oxide layer. The amorphous aluminum oxide layer is crystallized. The hydrogen or the hydroxyl radical is injected with one method among wet-oxidization, ion implantation and plasma doping. The aluminum oxide layer is heat-treated in 800~1300°C.
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