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Thermal shock resistance of porous ZrB_2-SiC ceramic after oxidation

机译:氧化后多孔ZrB_2-SiC陶瓷的热抗冲击性

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摘要

Thermal shock water quenching tests on porous ZrB_2-SiC (ZS) ceramics with 8.7,17.9 and 27.3% porosity were conducted after these specimens were oxidised in static air at a constant temperature of 1200°C for 30 min. The effect of oxidation on their thermal shock resistance was investigated in detail. The oxidation improved the material's thermal shock fracture resistance, but reduced their thermal shock damage resistance (TSDR). The thermal shock critical temperature difference (ΔT_c) of the oxidised porous ZS ceramics decreased as the porosity increased, which was the opposite trend to that observed in the case of unoxidised porous ZS ceramics. ZS ceramics with higher porosity had higher TSDR with or without oxidation treatment. Thickness of the oxidation layer, degree of oxide layer coverage and internal oxidation were observed to affect the thermal shock behaviour of the porous ZS ceramics.
机译:在将这些样品在1200℃的恒定温度下在1200℃的恒定温度下,在静态空气中氧化30分钟后,进行多孔ZrB_2-SiC(ZS)陶瓷的热冲击水猝灭试验。 详细研究了氧化对其热冲击性的影响。 氧化改善了材料的热休克断裂抗性,但减少了其热冲击损伤阻力(TSDR)。 随着孔隙率的增加,氧化多孔ZS陶瓷的热冲击临界温差(ΔT_c)降低,这与在无氧化的多孔Zs陶瓷的情况下观察到的相反趋势。 具有较高孔隙率的Zs陶瓷具有较高的TSDR,具有或不具有氧化处理。 观察氧化层的厚度,氧化物层覆盖度和内氧化以影响多孔ZS陶瓷的热冲击行为。

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