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Growth of GaN single crystals using Ca-Li3N composite flux

机译：Ca-Li3N复合助熔剂生长GaN单晶

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摘要

A Ca-Li3N composite flux was introduced to grow GaN single crystals from Ga melts. The obtained GaN crystals were colorless and Lip to 4 mm at 800 degrees C under N-2 pressure of about 2 atm. The effects of introducing the composite flux on the size distribution, morphologies, and yield of the GaN crystals were studied. It was found that the addition of Ca retarded the homogeneous nucleations to some extent and resulted in a more uniform size distribution of the GaN crystals in comparison with that grown using Li3N as flux only. The layered morphological feature on the GaN surface suggested that the layer growth mechanism was probably enhanced by the composite flux. The yield of the crystals was strongly dependent on the flux compositions. These results provided a possible new route for improving the growth of GaN crystals from melts in the future by optimizing the composite flux.
机译：引入Ca-Li3N复合助熔剂以从Ga熔体中生长GaN单晶。所获得的GaN晶体是无色的，并且在约2atm的N-2压力下在800℃下Lip至4mm。研究了引入复合助熔剂对GaN晶体的尺寸分布，形貌和产率的影响。与仅使用Li 3 N作为助熔剂生长的GaN晶体相比，发现Ca的添加在一定程度上延迟了均匀成核并导致GaN晶体的尺寸分布更加均匀。 GaN表面的分层形态特征表明，复合助熔剂可能会增强层的生长机理。晶体的产率在很大程度上取决于助焊剂的组成。这些结果为将来通过优化复合助熔剂改善熔体中GaN晶体的生长提供了一条可能的新途径。

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