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Growth of crystalline AgIn5S8 thin films on glass substrates from aqueous solutions

机译：水溶液中玻璃衬底上晶体AgIn5S8薄膜的生长

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摘要

Thin films of the silver indium sulfide (AgIn5S8) ternary semiconductor were prepared from acidic aqueous solutions containing silver nitrate, indium nitrate, and thioacetamide. Various preparative parameters, such as pH of the precursor solution, silver to indium concentration ratio [Ag]/[ln], and postreaction thermal treatment conditions were changed in order to grow uniform and adherent thin films on glass substrates. A series of X-ray diffraction patterns and scanning electron micrographs were used to reveal the growth process over time. It was found that granular Ag2S primary films were first attached to the glass substrate, followed by the indium sulfide deposition. A (111) preferred oriented AgIn5S8 with cubic spinel structure was obtained from the [Ag]/[In] = 4 and pH 0.6 precursor solution after 673 K thermal treatment for I h in an Ar environment. A two-step deposition mechanism was proposed and discussed in terms of stability constants of metal complexes and classical nucleation theory. In addition, our preliminary study showed that 3-mereaptopropyl-trimethoxysilane (MPS)-modified glass substrates further promoted the homogeneity and adhesion of AgIn5S8 thin films.
机译：由包含硝酸银，硝酸铟和硫代乙酰胺的酸性水溶液制备硫化银铟铟（AgIn5S8）三元半导体的薄膜。改变各种制备参数，例如前体溶液的pH，银与铟的浓度比[Ag] / [ln]和反应后热处理条件，以在玻璃基板上生长均匀且粘附的薄膜。一系列的X射线衍射图和扫描电子显微照片被用来揭示随着时间的增长过程。发现首先将颗粒状的Ag 2 S初级膜附着到玻璃基板上，然后进行硫化铟沉积。在Ar环境中经过673 K热处理1 h后，从[Ag] / [In] = 4和pH 0.6的前驱体溶液中获得了具有立方尖晶石结构的（111）优选取向AgIn5S8。根据金属配合物的稳定常数和经典的成核理论，提出了两步沉积机理。此外，我们的初步研究表明，经3-mereaptopropyl-trimethoxysilane（MPS）改性的玻璃基板可进一步提高AgIn5S8薄膜的均匀性和粘合性。

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