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首页> 外文期刊>Crystal growth & design >Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods
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Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

机译：自修复热退火：GaN纳米棒的表面形态重构控制

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摘要

With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be "self-healed". Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain-and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.
机译：随着纳米光刻技术和干法蚀刻技术的进步，自上而下的纳米结构化方法已成为提高光电子学效率的一种广泛使用的工具。这些纳米尺寸可以在光提取和效率方面为设备性能提供各种好处，但通常以发射颜色质量为代价。目标发射峰的展宽和有害的黄色发光是与离子缺陷相关的特有缺陷，这是由于离子束刻蚀造成的，特别是对于III N基材料。在本文中，我们将重点放在GaN基纳米棒上，这表明通过热退火，晶体结构的表面粗糙度和变形可以“自我修复”。相关的电子显微镜和原子力显微镜显示了从球形纳米棒到刻面六角形结构的变化，揭示了随温度变化的表面形态刻面演变。阴极发光高光谱成像，显微拉曼光谱和透射电子显微镜（TEM）显示，刻面纳米棒无应变和无缺陷。原位TEM热退火实验可以实时观察位错退火和表面结构的变化，这些位错运动和表面重构在原位退火TEM采样中观察到。这项热退火研究为GaN材料的重新分布路径和生长后的位错运动提供了新的见识，从而使人们对化合物半导体的光电子器件工艺有了更深入的了解，从而取得了进步。

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