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Controlling Nucleation and Crystal Growth of Ge in a Liquid Metal Solvent

机译：控制液态金属溶剂中Ge的形核和晶体生长

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摘要

The electrochemical liquid-liquid-solid (ec-LLS) deposition of crystalline germanium (Ge) in a eutectic mixture of liquid gallium (Ga) and indium (In) was analyzed as a function of liquid metal thickness, process temperature, and flux. Through control of reaction parameters, conditions were identified that allow selective nucleation and growth of crystalline Ge at the interface between e-GaIn and a crystalline Si substrate. The crystal growth rates of Ge by ec-LLS as a function of process temperatures were obtained from time-dependent powder X-ray diffraction measurements of crystalline Ge. The driving force, Delta mu, for crystal formation in ec-LLS was estimated through analyses of the experimental data in conjunction with predictions from a finite-difference model. The required Delta mu for Ge nucleation was tantamount to a supersaturation approximately 10(2) larger than the equilibrium concentration of Ge in e-GaIn at the investigated temperatures. These points are discussed both in the context of advancing new, low-temperature synthetic methodologies for crystalline semiconductor films and on understanding semiconductor crystal growth more deeply.
机译：分析了液态镓（Ga）和铟（In）的共晶混合物中结晶锗（Ge）的电化学液-液-固（ec-LLS）沉积，它是液态金属厚度，工艺温度和助熔剂的函数。通过控制反应参数，确定了允许在e-GaIn和晶体Si衬底之间的界面处选择性地成核和生长晶体Ge的条件。由ec-LLS测得的Ge的晶体生长速率随工艺温度的变化是从晶体Ge随时间的粉末X射线衍射测量得出的。通过对实验数据的分析并结合有限差分模型的预测，估算了ec-LLS中晶体形成的驱动力Delta mu。 Ge成核所需的Δmu等于过饱和度，比研究温度下e-GaIn中Ge的平衡浓度大约10（2）。在提出用于晶体半导体膜的新型低温合成方法的背景下，以及在更深入地理解半导体晶体生长的背景下，都讨论了这些观点。

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