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首页> 外文期刊>Crystal growth & design >Correlation between ZnO nanowire growth and the surface of AlN substrate
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Correlation between ZnO nanowire growth and the surface of AlN substrate

机译：ZnO纳米线生长与AlN衬底表面之间的相关性

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摘要

Single-crystalline ZnO nanowires are fabricated by thermal chemical vapor transport and condensation on AlN epilayers without employing any metal catalyst. Before the growth of ZnO nanowires, the surface of AlN epilayers was treated by HF solution and then changed to a mixture of flat plane and hillocks according to dipping time. ZnO nanowires along the c-axis direction of hexagonal structures were synthesized only on the HF treated AlN surface. ZnO nanowire arrays have been obtained by selective etching by photolithography process. A mechanism for nanowire growth on modified AlN epilayer is proposed.
机译：ZnO纳米单晶线是通过在AlN外延层上进行热化学气相传输和缩合而制得的，而无需使用任何金属催化剂。在生长ZnO纳米线之前，先用HF溶液处理AlN外延层的表面，然后根据浸入时间将其变为平面和小丘的混合物。沿六边形结构的c轴方向的ZnO纳米线仅在经过HF处理的AlN表面上合成。 ZnO纳米线阵列已通过光刻工艺选择性刻蚀获得。提出了在修饰的AlN外延层上纳米线生长的机理。

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