Vertical Bridgman Growth of 42 degrees RY-Oriented LiTaO3 Single Crystal

Nishimura Eiichiro; Okano Katsuhiko; Terashima Akira; Hoshikawa Keigo

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Vertical Bridgman Growth of 42 degrees RY-Oriented LiTaO3 Single Crystal

机译：垂直的Bridgman 124度的Ry-Riao3单晶

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摘要

Crack-free single crystals of 42 degrees RY-oriented lithium tantalate, 42 degrees RY-LiTaO3 (42 degrees RY-LT), are grown by the vertical Bridgman (VB) technique, using pure platinum bottomless crucibles to avoid cracking the seed crystal. The fundamental technical issues for 42 degrees RY-LT growth by the VB technique are clarified.

机译：无裂缝的单晶为42度，以Ry导向的锂钽酸盐，42度Ry-liao3（42度Ry-Lit）由垂直的Bridgman（VB）技术生长，使用纯铂无底坩埚，以避免裂解种子晶体。阐明了VB技术42度的基本技术问题，由VB技术进行了增长。

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来源
《Crystal Research and Technology: Journal of Experimental and Industrial Crystallography》 |2019年第10期|共5页
作者
Nishimura Eiichiro; Okano Katsuhiko; Terashima Akira; Hoshikawa Keigo;
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作者单位

Sumitomo Met Min Co Ltd Mat Labs Technol Div 1-6-1 Suehirocho Ome Tokyo 1988601 Japan;

Sumitomo Met Min Co Ltd Mat Labs Technol Div 1-6-1 Suehirocho Ome Tokyo 1988601 Japan;

Sumitomo Met Min Co Ltd Mat Labs Technol Div 1-6-1 Suehirocho Ome Tokyo 1988601 Japan;

Shinshu Univ Fac Engn 4-17-1 Wakasato Nagano 3808553 Japan;

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原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
42 degrees RY-LiTaO3; crack-free single crystals; LiTaO3; oxide crystals; platinum crucible; surface acoustic wave (SAW) devices; vertical Bridgman technique;

机译：42度Ry-liao3;无裂缝的单晶;LiaO3;氧化物晶体;铂坩埚;表面声波（锯）器件;垂直的Bridgman技术;

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专利

1. Vertical Bridgman Growth of 42 degrees RY-Oriented LiTaO3 Single Crystal [J] . Nishimura Eiichiro, Okano Katsuhiko, Terashima Akira, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2019,第10期

机译：垂直的Bridgman 124度的Ry-Riao3单晶
2. Growth and Characterization of CdTe Single Crystals Prepared by the "Liquinert Processed" Vertical Bridgman Method for Radiation Detectors [J] . Sekine Ryotaro, Uenomachi Mizuki, Asafusa Hiroki, Crystal growth & design . 2019,第11期

机译：“甘然人加工”垂直布里奇曼辐射探测器垂直桥商法制备CdTe单晶的生长和表征
3. Growth of ZnGeP2 single crystals by modified vertical Bridgman method for nonlinear optical devices [J] . Yang Deng-Hui, Zhao Bei-Jun, Chen Bao-Jun, Materials science in semiconductor processing . 2017,第期

机译：用于非线性光学器件的改进的垂直Bridgman方法来生长ZnGep2单晶
4. A COMPARATIVE STUDY ON THE SINGLE CRYSTAL GROWTH OF CMSX-4 VIA THE VERTICAL BRIDGMAN AND VERTICAL BRIDGMAN WITH A SUBMERGED BAFFLE [C] . M. Bacak, M. Montakhab, E. Balikci TMS annual meeting exhibition . 2015

机译：垂直布里奇曼和水下布里奇曼的垂直布里奇曼对CMSX-4单晶生长的比较研究
5. Growth and characterization of bismuth tri-iodide single crystals by modified vertical Bridgman method. [D] . Qui, Wei. 2010

机译：改进的垂直布里奇曼法生长和表征三碘化铋单晶。
6. Photoluminescence characteristics of Cd1-xMnxTe single crystals grown by the vertical Bridgman method [O] . Younghun Hwang, Youngho Um, Hyoyeol Park 2012

机译：垂直布里奇曼法生长的Cd1-xMnxTe单晶的光致发光特性
7. Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air [O] . K. Hoshikawa, E. Ohba, T. Kobayashi, 2016

机译：在环境空气中使用垂直布里格曼方法的β-GA 2 O 3单晶的生长

Vertical Bridgman Growth of 42 degrees RY-Oriented LiTaO3 Single Crystal

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