Nanoheterostructures Optimization and Characteristics Improvement for Devices Based on Them

Rabinovich O. I.; Didenko S. I.

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Nanoheterostructures Optimization and Characteristics Improvement for Devices Based on Them

机译：基于它们的设备的纳米能结构优化和特性改进

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The AlInGaN and AlGaInP nanoheterostructures design has been optimized by computer simulation in order to use them in optoelectronics. The possibility of improving the performance characteristics of LEDs by 20% is analyzed. The results are presented in the form of current-voltage (I-V) characteristics, dependence of the internal quantum efficiency on the quantum wells quantity, and spectral characteristics. The influence of the In atoms nonuniform distribution in the quantum-well region is determined.

机译：Alingan和AlGaInP纳米能结构设计已经通过计算机仿真优化，以便在光电子中使用它们。分析了提高LED性能特性20％的可能性。结果以电流 - 电压（I-V）特性的形式呈现，内部量子效率对量子孔数量的依赖性，以及光谱特性。确定了在量子阱区中的原子非均匀分布的影响。

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《Crystallography reports》 |2017年第3期|共6页
作者
Rabinovich O. I.; Didenko S. I.;
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Natl Univ Sci &

Technol MISiS Moscow 119049 Russia;

Natl Univ Sci &

Technol MISiS Moscow 119049 Russia;

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正文语种 eng
中图分类晶体学;
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1. Nanoheterostructures Optimization and Characteristics Improvement for Devices Based on Them [J] . Rabinovich O. I., Didenko S. I. Crystallography reports . 2017,第3期

机译：基于它们的设备的纳米能结构优化和特性改进
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Nanoheterostructures Optimization and Characteristics Improvement for Devices Based on Them

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