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首页> 外文期刊>Crystal growth & design >Large-area oblique-aligned ZnO nanowires through a continuously bent columnar buffer: Growth, microstructure, and antireflection
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Large-area oblique-aligned ZnO nanowires through a continuously bent columnar buffer: Growth, microstructure, and antireflection

机译：通过连续弯曲的柱状缓冲液进行大面积倾斜排列的ZnO纳米线：生长，微结构和抗反射

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摘要

We demonstrate a novel defect-induced bending mechanism for a modified oblique-angle deposition (OAD) system, where different defect density was introduced to accommodate the mass difference between the shadowed and exposed surfaces, leading to continuous structural bending. Oblique angle sputtering and hydrothermal processes were employed for growth of inclined ZnO nanowire arrays on ZnO bent columns. Transmission electron microscopy images reveal that a dislocation network was introduced to accommodate the mass difference in bent columns, and the bending angle could be controlled by growth temperature. Nanowires were then grown along the tangent lines of the bent column tips. The bent column curvature and limited space determine the nanowire growth direction. The reflectance measurements demonstrate that the oblique-aligned ZnO nanowire arrays are an excellent candidate for antireflection coatings, showing the significant suppression of reflectance of 87.5% and 90.0% for polished Si under TE and TM polarization, respectively. The interference oscillations of reflectance show the optical anisotropy of oblique-aligned ZnO nanowire arrays, which is dependent on the angle range of nanowire direction.
机译：我们演示了一种改进的斜角沉积（OAD）系统的新型缺陷诱导弯曲机制，其中引入了不同的缺陷密度以适应阴影表面和暴露表面之间的质量差异，从而导致连续的结构弯曲。采用斜角溅射和水热工艺在ZnO弯曲柱上生长倾斜的ZnO纳米线阵列。透射电子显微镜图像显示，引入了位错网络以适应弯曲柱的质量差异，并且弯曲角度可以通过生长温度来控制。然后，纳米线沿着弯曲的柱头的切线生长。弯曲的柱曲率和有限的空间决定了纳米线的生长方向。反射率测量结果表明，倾斜排列的ZnO纳米线阵列是抗反射涂层的极佳候选材料，显示出在TE和TM偏振下对抛光的Si的反射率分别有87.5％和90.0％的显着抑制。反射率的干涉振荡显示出倾斜排列的ZnO纳米线阵列的光学各向异性，这取决于纳米线方向的角度范围。

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