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Highly Oriented ZnO Nanorod Arrays by a Novel Plasma Chemical Vapor Deposition Process

机译:通过新型等离子体化学气相沉积工艺制备高度取向的ZnO纳米棒阵列

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摘要

Strongly c-axis oriented ZnO nanorod arrays were grown on Si(100) by plasma enhanced-chemical vapor deposition (PE-CVD) starting from two volatile bis(ketoiminato) zinc(II) compounds Zn[(R')NC(CH3)=C(H)C(CH3)=O](2), with R' = -(CH2)(x)OCH3 (x = 2, 3). A systematic investigation of process parameters enabled us to obtain the selective formation of ZnO nanorods with tailored features, and provided an important insight into their growth mechanism. The morphology, structure, and composition or the synthesized ZnO nanosystems were thoroughly analyzed by field emission-scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDXS), glancing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (X PS). and transmission electron microscopy (TEM). Photoluminescence (PL) measurements were carried out to gain information on the optical properties. Specifically, one-dimensional (ID) ZnO architectures could be grown on Si(100) substrates at temperatures as low as 200-300 degrees C and radio frequency (RF)-power values of 20 W, provided that a sufficiently high mass supply to the growth surface was maintained. To the best of our knowledge, the present work reports the mildest preparation conditions ever appeared in the literature for the PE-CVD of ZnO nanorods, a key result in view of potential large-scale technological applications.
机译:通过等离子体增强化学气相沉积(PE-CVD)在Si(100)上生长强c轴取向的ZnO纳米棒阵列,该方法从两个挥发性双(酮亚氨基)锌(II)化合物Zn [(R')NC(CH3)开始= C(H)C(CH 3)= O](2),其中R′=-(CH 2)(x)OCH 3(x = 2、3)。对工艺参数的系统研究使我们能够选择性地形成具有定制特征的ZnO纳米棒,并为其生长机理提供了重要的见识。通过场发射扫描电子显微镜(FE-SEM),能量色散X射线能谱(EDXS),掠射入射X射线衍射(GIXRD),X-射线对XO的形貌,结构和组成或合成的ZnO纳米系统进行了全面分析。射线光电子能谱(X PS)。和透射电子显微镜(TEM)。进行光致发光(PL)测量以获取有关光学性质的信息。具体来说,一维(ID)ZnO架构可以在低至200-300摄氏度的温度和20 W的射频(RF)功率值的条件下在Si(100)衬底上生长,前提是要提供足够高的质量生长表面得以维持。据我们所知,本工作报道了ZnO纳米棒的PE-CVD文献中出现的最温和的制备条件,这是潜在的大规模技术应用的关键结果。

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