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首页> 外文期刊>Crystal growth & design >Self-induced preparation of assembled shrubbery TiSi nanowires by chemical vapor deposition
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Self-induced preparation of assembled shrubbery TiSi nanowires by chemical vapor deposition

机译：化学气相沉积自诱导制备组装灌木TiSi纳米线

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摘要

We report a new self-induced catalyst-free method for the preparation of shrubbery TiSi nanowires by atmospheric pressure chemical vapor deposition. SiH4 and TiCl4 are used as a silicon precursor and titanium precursor, respectively. Ti5Si3 thin films are formed initially, and then one-dimensional TiSi nanostructures are grown on top of the thin films. A novel, assembled structure with electrically conductive shrubbery TiSi nanowires with an electrically conductive Ti5Si3 thin layer underneath is finally obtained. The TiSi nanowires grow along the direction perpendicular to the (110) plane of the orthorhombic TiSi crystal. The nanowires are more than 5 mu m long, and their diameters are about 15-40 nm. With the flux of (SiH4 + TiCl4) reaching values larger than 35 seem or increasing from 20 to 35 seem, the quantities of TiSi nuclei are increased and, thus, the TiSi nanowire bundles and rocket-shaped nanowires are also successfully prepared, respectively. With regard to producing a high storage capacitor with the nanowire bottom electrode embedded within the dielectric thin film of Ba0.6Sr0.4TiO3 (BST), the capacitance of the BST/assembled-nanowire-electrode complex structure is about 28 pF, which is approximately 3 times higher than that of BST deposited on indium-tin oxide (ITO). This creates a new way to fabricate the thin film devices with a high storage capacitance.
机译：我们报告了一种新的自诱导无催化剂的方法，用于通过常压化学气相沉积法制备灌木TiSi纳米线。 SiH4和TiCl4分别用作硅前体和钛前体。首先形成Ti5Si3薄膜，然后在薄膜顶部生长一维TiSi纳米结构。最终获得了一种新颖的组装结构，该结构具有导电性灌木TiSi纳米线，其下面具有导电性Ti5Si3薄层。 TiSi纳米线沿着垂直于正交TiSi晶体的（110）平面的方向生长。纳米线的长度大于5微米，其直径约为15-40 nm。随着（SiH4 + TiCl4）的通量达到大于35sccm的值或从20sccm增加到35sccm，TiSi核的数量增加，因此，也分别成功制备了TiSi纳米线束和火箭状纳米线。关于生产具有埋入Ba0.6Sr0.4TiO3（BST）的电介质薄膜中的纳米线底部电极的高存储电容器，BST /纳米线电极复合结构的电容约为28 pF，约为比沉积在铟锡氧化物（ITO）上的BST高3倍。这创造了一种制造具有高存储电容的薄膜器件的新方法。

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