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首页> 外文期刊>Crystal growth & design >A Novel Method to Grow Thallium Bromide Single Crystal and Crystal Habit Discussion
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A Novel Method to Grow Thallium Bromide Single Crystal and Crystal Habit Discussion

机译：生长溴化Single单晶的新方法及晶体习性的讨论

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摘要

A novel melt-based method has been introduced to prepare thallium bromide (TlBr) single crystal for radiation detector use. Crystal growth was conducted by a simplified electro dynamic gradient (EDG) process with no motion of mechanical equipment. TlBr crystal of 8 mm diameter, preferentially oriented in the [110] direction, was obtained. X-ray diffraction (XRD) patterns are used to evaluate the obtained crystal and analyze the growth procedure. Rocking curve characterization shows strain in the crystal. Step-by-step two-dimensional X-ray diffraction has been taken to study the orientation distribution of the sample. The importance of heat conduction along the axial direction during crystal growth is proven by orientation distribution together with the influence of ampule diameter on crystal quality. Crystal habit is discussed by analyzing experimental results and crystal lattice structure.
机译：已经引入了一种新颖的基于熔体的方法来制备用于辐射探测器的溴化（（TlBr）单晶。晶体生长是通过简化的动态梯度（EDG）工艺进行的，无需机械设备的运动。获得了优选沿[110]方向取向的直径为8mm的TlBr晶体。 X射线衍射（XRD）图案用于评估获得的晶体并分析生长过程。摇摆曲线表征显示晶体中的应变。逐步二维X射线衍射已被用来研究样品的取向分布。通过取向分布以及安瓿直径对晶体质量的影响证明了晶体生长过程中沿轴向导热的重要性。通过分析实验结果和晶格结构来讨论晶习。

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