Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy

Dogan P.; Brandt O.; Pfüller C.; L?hnemann J.; Jahn U.; Roder C.; Trampert A.; Geelhaar L.; Riechert H.

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Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy

机译：通过分子束外延在Si（111）上通过GaN纳米线的外延外延生长形成高质量的GaN微晶

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Hexagonal GaN microcrystals of a size between 1 to 3 μm are obtained by the pendeoepitaxial overgrowth of a GaN nanowire template on Si(111). The GaN microcrystals are free of threading dislocations and exhibit an atomically smooth surface (roughness of 0.2 nm). Photoluminescence spectra of these microcrystals are dominated by an intense donor-bound exciton transition at 3.471 eV with a width of 1 meV reflecting strain-free GaN of exceptional structural quality.

机译：通过在Si（111）上进行GaN纳米线模板的五方外延生长，可以获得尺寸为1-3μm的六方GaN微晶。 GaN微晶无螺纹位错，并显示出原子光滑的表面（粗糙度为0.2 nm）。这些微晶的光致发光光谱主要由3.471 eV的强烈供体结合的激子跃迁所主导，其宽度为1 meV，反映出具有卓越结构质量的无应变GaN。

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《Crystal growth & design》 |2011年第10期|共4页
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Dogan P.; Brandt O.; Pfüller C.; L?hnemann J.; Jahn U.; Roder C.; Trampert A.; Geelhaar L.; Riechert H.;
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中图分类晶体学;
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1. Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy [J] . Dogan P., Brandt O., Pfüller C., Crystal growth & design . 2011,第10期

机译：通过分子束外延在Si（111）上通过GaN纳米线的外延外延生长形成高质量的GaN微晶
2. Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy-Formation of high-quality GaN microcolumns [J] . Kei Kato, Katsumi Kishino, Hiroto Sekiguchi, Journal of Crystal Growth . 2009,第10期

机译：射频等离子体辅助分子束外延在Be掺杂聚结GaN纳米柱层上GaN的过度生长-高质量GaN微柱的形成
3. Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy [J] . Sukrittanon S., Kuang Y.J., Dobrovolsky A., Applied Physics Letters . 2014,第7期

机译：稀氮化物GaN x P 1-x 纳米线和GaN x P 1-x / GaN的生长和表征气源分子束外延作用在Si（111）上的 y P 1-y 核/壳纳米线
4. Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy [C] . Pinar Dogan, Oliver Brandt, Christian Hauswald, Gallium nitride materials and devices VII . 2012

机译：分子束外延法研究纳米线模板的形貌对氮化硅纳米线在硅上聚结过度生长的影响
5. Structure, morphology, and kinetics of GaN film growth using gas-source and RF plasma-assisted metal-organic molecular beam epitaxy [D] . Woll, Arthur Randall 2000

机译：使用气体源和RF等离子体辅助金属 - 有机分子束外延对GaN薄膜生长的结构，形态和动力学
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy [O] . Yaozheng Wu, Bin Liu, Zhenhua Li, 2020

机译：分子束外延的InGaN / GaN多量子阱纳米线的合成与性能
8. Steady-State and Transient Photoconductivity in c-Axis GaN Nanowires Grown by Nitrogen-Plasma-Assisted Molecular Beam Epitaxy [R] . Sanford, N. A., Blanchard, P. T., Bertness, K. A., 2010

机译：氮等离子体辅助分子束外延生长的c轴GaN纳米线的稳态和瞬态光电导

Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy

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