Characteristics of strain-induced in _xGa _(1-x)as nanowires grown on Si(111) substrates

Shin J.C.; Choi K.J.; Kim D.Y.; Choi W.J.; Li X.

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Characteristics of strain-induced in _xGa _(1-x)as nanowires grown on Si(111) substrates

机译：在Si（111）衬底上生长的_xGa _（1-x）纳米线中的应变诱导特性

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Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In _xGa _(1-x)As on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In _xGa _(1-x)As NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In _xGa _(1-x)As NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.

机译：由晶格失配引起的大应变能允许在硅基板上进行In_xGa _（1-x）As的一维异质外延生长，而无需任何催化剂或图案辅助。在本文中，我们表明，与通过金属催化的气液固机制生长的纳米线（NW）相比，应变诱导的In _xGa _（1-x）As纳米线具有几种独特的形态特征，包括无锥度，轻微弯曲以及取决于成分的NW高度饱和度。尽管存在很小的波动，但是在能量色散X射线光谱分析的分辨率范围内，在整个In _xGa _（1-x）As NW长度上未观察到系统的成分变化。

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《Crystal growth & design》 |2012年第6期|共5页
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Shin J.C.; Choi K.J.; Kim D.Y.; Choi W.J.; Li X.;
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中图分类晶体学;
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1. Characteristics of strain-induced in _xGa _(1-x)as nanowires grown on Si(111) substrates [J] . Shin J.C., Choi K.J., Kim D.Y., Crystal growth & design . 2012,第6期

机译：在Si（111）衬底上生长的_xGa _（1-x）纳米线中的应变诱导特性
2. High-Quality Uniaxial In_xGa_(1-x)N/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and Light-Emitting Diode (LED) Fabrication [J] . Yong-Ho Ra, R. Navamathavan, Ji-Hyeon Park ACS applied materials & interfaces . 2013,第6期

机译：金属有机化学气相沉积（MOCVD）和发光二极管（LED）制造的Si（111）上的高质量单轴In_xGa_（1-x）N / GaN多量子阱（MQW）纳米线（NWs）
3. High efficiency ultraviolet emission from Al_xGa_(1-x)N core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy [J] . Q. Wang, H. P. T. Nguyen, K. Cui, Applied Physics Letters . 2012,第4期

机译：分子束外延在Si（111）上生长的Al_xGa_（1-x）N核-壳纳米线异质结构的高效紫外发射
4. MOVPE-grown n-In_xGa_(1-x)N(x～0.5)/p-Si(111)template as a novel substrate [C] . A. Yamamoto, A. Mihara, K. Sugita, Light-emitting diodes: Materials, devices, and applications for solid state lighting XVII . 2013

机译：MOVPE生长的n-In_xGa_（1-x）N（x〜0.5）/ p-Si（111）模板作为新型衬底
5. 使用射頻電漿輔助化學束磊晶成長氮化銦磊晶材料於表面氮化處理矽(111)基板之研究 =Investigation of Epi-InN Materials Grown on Surface Nitride Si (111) Substrate by RF-CBE [D] . Chen, Sheng. 2019

机译：使用射频电浆辅助化学束磊晶成长氮化铟磊晶材料于表面氮化处理矽(111)基板之研究 =Investigation of Epi-InN Materials Grown on Surface Nitride Si (111) Substrate by RF-CBE
6. Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires [O] . Ramon delos Santos, Jasher John Ibañes, Maria Herminia Balgos, 2015

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7. Characteristics of Strain-Induced InxGa1−xAs Nanowires Grown on Si(111) Substrates [O] . Jae Cheol Shin, Kyoung Jin Choi, Do Yang Kim, 2016

机译：si（111）衬底上生长的应变诱导InxGa1-xas纳米线的特性
8. Strategies for Direct Monolithic Integration of AlxGa(1-x)As/InxGa(1-x) As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1-x) Buffer Layers. [R] . Groenert, M. E., Leitz, C. W., Pitera, A. J., 2002

机译：通过弛豫渐变Gexsi（1-x）缓冲层在Ge / Gesi / si衬底上直接单片集成alxGa（1-x）as / InxGa（1-x）as LED和激光器的策略。

Characteristics of strain-induced in _xGa _(1-x)as nanowires grown on Si(111) substrates

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