Effects of source materials and container on growth process of SiC crystal

Liu JL; Gao JQ; Cheng JK; Jiang X; Yang JF; Qiao GJ

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Effects of source materials and container on growth process of SiC crystal

机译：原料和容器对SiC晶体生长过程的影响

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Nucleation of SiC polycrystals was investigated using TaC and graphite lids. TaC and graphite containers were also used to compare the growth rates of SiC crystal in four systems ( TaC + SiC, C + SiC, TaC + Si + SiC, and C + Si + SiC systems). The experimental results indicated that graphite lids provide growth conditions for SiC polycrystals that restrict the radial direction growth of seed. The TaC lid can restrain nucleation of SiC polycrystals, which creates better growth conditions for seed along the radial direction. The growth rates of SiC crystal for the TaC + Si + SiC and C + Si + SiC systems are higher than those of the TaC + SiC and C + SiC systems.

机译：使用TaC和石墨盖研究了SiC多晶的成核作用。还使用TaC和石墨容器比较了四个系统（TaC + SiC，C + SiC，TaC + Si + SiC和C + Si + SiC系统）中SiC晶体的生长速率。实验结果表明，石墨盖为SiC多晶提供了生长条件，从而限制了种子的径向生长。 TaC盖可以抑制SiC多晶的形核，从而为沿径向的种子创造更好的生长条件。 TaC + Si + SiC和C + Si + SiC系统的SiC晶体生长速率高于TaC + SiC和C + SiC系统的SiC晶体生长速率。

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来源
《Crystal growth & design》 |2006年第9期|共3页
作者
Liu JL; Gao JQ; Cheng JK; Jiang X; Yang JF; Qiao GJ;
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原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
SUBLIMATION SANDWICH METHOD; CARBIDE BULK CRYSTALS; SILICON-CARBIDE; SINGLE-CRYSTALS; MECHANISM; 6H;

机译：求和夹心法;硬质合金;碳化硅;单晶;机理;6H;

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1. Effects of source materials and container on growth process of SiC crystal [J] . Liu JL, Gao JQ, Cheng JK, Crystal growth & design . 2006,第9期

机译：原料和容器对SiC晶体生长过程的影响
2. Analysis of sublimation growth of bulk SiC crystals in tantalum container [J] . S.Yu. Karpov, A.V. Kulik, I.A. Zhmakin, Journal of Crystal Growth . 2000,第1a4期

机译：钽容器中块状SiC晶体的升华生长分析
3. USE OF TA-CONTAINER FOR SUBLIMATION GROWTH AND DOPING OF SIC BULK CRYSTALS AND EPITAXIAL LAYERS [J] . Vodakov YA., Ramm MG., Mokhov EN., Physica status solidi, B. Basic research . 1997,第1期

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5. Three-dimensional adaptive finite volume scheme for transport phenomena in materials processing: Application to Czochralski crystal growth. [D] . Chatterjee, Athonu. 1998

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Effects of source materials and container on growth process of SiC crystal

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