USE OF TA-CONTAINER FOR SUBLIMATION GROWTH AND DOPING OF SIC BULK CRYSTALS AND EPITAXIAL LAYERS

Vodakov YA.; Ramm MG.; Mokhov EN.; Makarov YN.; Roenkov AD.

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USE OF TA-CONTAINER FOR SUBLIMATION GROWTH AND DOPING OF SIC BULK CRYSTALS AND EPITAXIAL LAYERS

机译：使用TA容器对SIC本体晶体和表观层进行增生和掺杂

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Analysis of specific features of sublimation growth of bulk SiC crystals in presence of Ta is performed. Control of doping and formation of different SiC polytypes is discussed. Description of mechanisms responsible for generation of micropipes during sublimation growth of bulk crystals is given. It is shown that use of Ta is promising for growth of bulk SiC crystals. [References: 45]

机译：分析了在Ta存在下SiC晶体的升华生长的具体特征。讨论了掺杂控制和不同SiC多晶型的形成。给出了在块状晶体升华生长过程中产生微管的机理的描述。结果表明，使用Ta有望生长块状SiC晶体。 [参考：45]

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《Physica status solidi, B. Basic research》 |1997年第1期|共24页
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Vodakov YA.; Ramm MG.; Mokhov EN.; Makarov YN.; Roenkov AD.;
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中图分类固体物理学;
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1. USE OF TA-CONTAINER FOR SUBLIMATION GROWTH AND DOPING OF SIC BULK CRYSTALS AND EPITAXIAL LAYERS [J] . Vodakov YA., Ramm MG., Mokhov EN., Physica status solidi, B. Basic research . 1997,第1期

机译：使用TA容器对SIC本体晶体和表观层进行增生和掺杂
2. Growth of low resistivity n-type 4H-SiC bulk crystals by sublimation method using co-doping technique [J] . Tomohisa Kato, Kazuma Eto, Satoru Takagi, Materials science forum . 2014,第pta1期

机译：使用共掺杂技术通过升华法生长低电阻率n型4H-SiC块状晶体
3. Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (Ⅱ) ―Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping― [J] . Katsuhiko NAKAI, Koichi KITAHARA, Yasumitsu OHTA, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4APt1期

机译：氮掺杂直拉生长硅衬底上外延层的晶体缺陷（Ⅱ）“通过控制晶体生长条件和碳共掺杂抑制外延层中的晶体缺陷”
4. 3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers [C] . P. Schuh, G. Litrico, F. La Via, 2016 European Conference on Silicon Carbide amp; Related Materials . 2016

机译：CVD异质外延晶种层上的3C-SiC整体升华生长
5. Sublimation growth of aluminum nitride bulk crystals and high-speed CVD growth of silicon carbide epilayers, and their characterization. [D] . Lu, Peng. 2006

机译：氮化铝块状晶体的升华生长和碳化硅外延层的高速CVD生长及其表征。
6. The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth [O] . Yun Zhao, Chengming Li, Jinlong Liu, 2019

机译：多层氮掺杂外延生长法制备的CVD单晶金刚石的界面和力学性能
7. Sublimation growth of ALN bulk crystals and high-speed CVD growth of SiC epilayers, and their characterization [O] . Lu Peng 100

机译：aLN块体的升华生长和siC外延层的高速CVD生长及其表征

USE OF TA-CONTAINER FOR SUBLIMATION GROWTH AND DOPING OF SIC BULK CRYSTALS AND EPITAXIAL LAYERS

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