Double-source approach to In2S3 single crystallites and their electrochemical properties

Liu Y; Xu HY; Qian YT

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Double-source approach to In2S3 single crystallites and their electrochemical properties

机译：In2S3单晶的双源方法及其电化学性质

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Novel cubic and tetragonal In2S3 hollow microspheres consisting of nanoflakes, as well as cubic In2S3 nanoflakes, were synthesized via a double-sulfur-source approach using InCl3 center dot 4H(2)O as the indium source under solvothermal conductions. Cubic and tetragonal In2S3 hollow microspheres with an average diameter of 5-15 mu m reveal flat and clean nanoflakes inside the microspheres; the In2S3 nanoflakes have an average thickness of 10 nm. The samples were characterized by XRD, FESEM, TEM, SAED, HRTEM, and XPS. Electrochemical tests show that these cubic In2S3 nanoflakes deliver an astoundingly large discharge capacity of 1150 mA h g(-1) vs Li metal at 0.032 mA cm(-2) (voltage window of 0-3.0 V) compared with that of ordinary cathode materials. The obtained sample might find promising application as an electrode material in lithium ion batteries.

机译：通过双硫源方法，使用InCl3中心点4H（2）O作为铟源，在溶剂热传导下，通过双硫源方法合成了由纳米薄片以及立方In2S3纳米薄片组成的新型立方和四方In2S3空心微球。平均直径为5-15微米的立方和四方In2S3中空微球在微球内部显示出平坦而干净的纳米薄片; In2S3纳米薄片的平均厚度为10 nm。通过XRD，FESEM，TEM，SAED，HRTEM和XPS对样品进行表征。电化学测试表明，与普通阴极材料相比，在0.032 mA cm（-2）（0-3.0 V的电压范围）下，这些立方In2S3纳米薄片相对于Li金属提供1150 mA h g（-1）的惊人大放电容量。所获得的样品可能在锂离子电池中作为电极材料具有广阔的应用前景。

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《Crystal growth & design》 |2006年第6期|共4页
作者
Liu Y; Xu HY; Qian YT;
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正文语种 eng
中图分类晶体学;
关键词
BETA-IN2S3 THIN-FILMS; ELECTRICAL-PROPERTIES; ANGULAR-CORRELATION; OPTICAL-PROPERTIES; MORPHOLOGY; REDUCTION; SULFIDES; LITHIUM; SPRAY;

机译：BETA-IN2S3薄膜;电气特性;角相关;光学特性;形态学;还原;硫化物;锂;喷涂;

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机译：In2S3单晶的双源方法及其电化学性质
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Double-source approach to In2S3 single crystallites and their electrochemical properties

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