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首页> 外文期刊>Crystal growth & design >Growth of incipient ferroelectric KTaO_3 single crystals by a modified self-flux solution method
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Growth of incipient ferroelectric KTaO_3 single crystals by a modified self-flux solution method

机译：改进的自通量溶液法生长初生铁电体KTaO_3单晶

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摘要

High-quality potassium tantalate (KTaO_3, KT) single crystals are grown by a high-temperature self-flux solution modified method in which potassium carbonate (K_2CO_3) and boron oxide (B _2O_3) are utilized as a complex flux. Additions of small amounts of boron oxide, used because of its low melting temperature (450 °C) and tendency to decrease the weight losses, increased the metastable region, requiring lower temperature (≤1300 °C) for the growth of relatively large KT crystals thereby suppressing the K volatilization tendency. By changing the flux composition and flux to solute proportion growth conditions are modified. The as-grown potassium tantalate crystals exhibit a dielectric permittivity of 6600 and dielectric losses of 0.004 at 13 K and 100 kHz. These results suggest a new promising approach for growing relatively large size and high quality single crystals within KT-based system.
机译：高质量的钽酸钾（KTaO_3，KT）单晶通过高温自熔溶液改性方法生长，其中碳酸钾（K_2CO_3）和氧化硼（B_2O_3）被用作复合助熔剂。由于熔融温度低（450°C）且倾向于减少重量损失而添加的少量氧化硼，增加了亚稳区域，需要较低的温度（≤1300°C）才能生长较大的KT晶体从而抑制了K的挥发趋势。通过改变焊剂成分和焊剂至溶质比例，可以改变生长条件。刚生长的钽酸钾晶体在13 K和100 kHz下的介电常数为6600，介电损耗为0.004。这些结果表明了一种新的有前途的方法，可以在基于KT的系统中生长相对较大尺寸和高质量的单晶。

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